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MAC8SN

更新时间： 2024-09-14 03:24:35
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发装置可控硅三端双向交流开关局域网
页数 文件大小 规格书
7页 77K
描述
Sensitive Gate Triacs Silicon Bidirectional Thyristors

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中文翻译

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MAC8SN 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：TO-220AB
包装说明：CASE 221A-09, 3 PIN针数：3
Reach Compliance Code：not_compliantHTS代码：8541.30.00.80
风险等级：5.22Is Samacsys：N
其他特性：SENSITIVE GATE外壳连接：MAIN TERMINAL 2
配置：SINGLE关态电压最小值的临界上升速率：25 V/us
最大直流栅极触发电流：5 mA最大直流栅极触发电压：1.5 V
最大维持电流：10 mAJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：110 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：235
认证状态：Not Qualified最大均方根通态电流：8 A
断态重复峰值电压：800 V子类别：TRIACs
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED触发设备类型：4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches：1

MAC8SN 数据手册

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MAC8SD, MAC8SM, MAC8SN  
Preferred Device  
Sensitive Gate Triacs  
Silicon Bidirectional Thyristors  
Designed for industrial and consumer applications for full wave  
control of ac loads such as appliance controls, heater controls, motor  
controls, and other power switching applications.  
http://onsemi.com  
Features  
TRIACS  
8 AMPERES RMS  
400 thru 800 VOLTS  
• Sensitive Gate Allows Triggering by Microcontrollers and other  
Logic Circuits  
• Uniform Gate Trigger Currents in Three Quadrants; Q1, Q2, and Q3  
• High Immunity to dv/dt − 25 V/ms Minimum at 110°C  
• High Commutating di/dt − 8.0 A/ms Minimum at 110°C  
MT2  
MT1  
G
• Maximum Values of I , V and I Specified for Ease of Design  
GT GT  
H
MARKING  
DIAGRAM  
• On-State Current Rating of 8 Amperes RMS at 70°C  
• High Surge Current Capability − 70 Amperes  
• Blocking Voltage to 800 Volts  
• Rugged, Economical TO−220AB Package  
• Pb−Free Packages are Available*  
MAC8SxG  
AYWW  
TO−220AB  
CASE 221A−09  
STYLE 4  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
1
2
Rating  
Symbol  
Value  
Unit  
3
Peak Repetitive Off−State Voltage (Note 1)  
V
V
V
DRM,  
RRM  
(T = −40 to 110°C,  
J
x
= D, M, or N  
Sine Wave, 50 to 60 Hz, Gate Open)  
A
Y
= Assembly Location  
= Year  
MAC8SD  
MAC8SM  
MAC8SN  
400  
600  
800  
WW = Work Week  
G
= Pb−Free Package  
On-State RMS Current  
I
8.0  
A
A
T(RMS)  
(Full Cycle Sine Wave, 60 Hz, T = 70°C)  
C
PIN ASSIGNMENT  
Peak Non-Repetitive Surge Current  
(One Full Cycle Sine Wave, 60 Hz,  
I
TSM  
70  
1
Main Terminal 1  
T = 110°C)  
J
2
3
4
Main Terminal 2  
Gate  
2
2
Circuit Fusing Consideration (t = 8.3 ms)  
I t  
20  
16  
A sec  
Peak Gate Power  
P
W
W
GM  
Main Terminal 2  
(Pulse Width ≤ 1.0 ms, T = 70°C)  
C
Average Gate Power  
P
0.35  
G(AV)  
ORDERING INFORMATION  
(t = 8.3 ms, T = 70°C)  
C
Device  
Package  
Shipping  
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to +110  
−40 to +150  
°C  
°C  
J
MAC8SD  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
T
stg  
MAC8SDG  
TO−220AB  
(Pb−Free)  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MAC8SM  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
MAC8SMG  
TO−220AB  
(Pb−Free)  
1. V  
and V  
for all types can be applied on a continuous basis. Blocking  
DRM  
RRM  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
MAC8SN  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
MAC8SNG  
TO−220AB  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
December, 2005 − Rev. 5  
MAC8S/D  
 
1234567

中文翻译

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MAC8SN 替代型号

型号 品牌 替代类型 描述 数据表
MAC8SNG ONSEMI

完全替代

 Sensitive Gate Triacs Silicon Bidirectional Thyristors

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