Datasheet > MAC6401N

MAC6401N

更新时间： 2024-09-14 20:52:23

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描述
Triac; Max Peak Repetitive Reverse Voltage: 30; Max TMS Bridge Input Voltage: 300; Max DC Reverse Voltage: 4; Capacitance: 80

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数据手册

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MAC6401N 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.83
Base Number Matches：	1

MAC6401N 数据手册

MAC6401 SERIES

BIDIRECTIONAL TRIODE THYRISTORS

High-reliability discrete products

and engineering services since 1977

FEATURES



Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Repetitive peak off-stage voltage, gate open

(T_J= -65 to +100°C)

MAC6401B

200

400

600

800

V_DRM

Volts

MAC6401D

MAC6401M

MAC6401N

RMS on-state current (conduction angle = 360°, T_C≤ 65°C)

Peak non-repetitive surge current (One Cycle, 60Hz)

I_T(RMS)

I_TSM

Amps

300

Circuit fusing considerations

I²t

A²s

(T_J= -65 to +100°C, t = 1.25 to 10ms)

450

Peak gate power (pulse width = 1.0µs)

P_GM

P_G(AV)

I_GM

0.75

Watts

Amps

°C

Average gate power

≤ 1.0µs)

Peak gate current (pulse width

Operating junction temperature range

Storage temperature range

Stud torque

T_J

-65 to +100

-65 to +150

T_stg

°C

In. lb.

THERMAL CHARACTERISTICS

Characteristics

Symbol

R_ӨJC

Max

Unit

Thermal resistance, junction to case

0.9

°C/W

ELECTRICAL CHARACTERISTICS (T_C= 25°C and either polarity of MT2 to MT1 voltage, unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Peak off state current

I_DRM

(V_D= V_DRM, gate open, T_J= 100°C

Peak on-state voltage (either direction)

V_TM

Volts

(I_TM= 100A peak)

2.1

2.5

DC gate trigger current (continuous dc)

Ω)

(V_D= 12V, R_L= 30

I_GT

MT2(+), G(+); MT2(-), G(-)

MT2(+), G(-); MT2(-), G(+)

DC gate trigger voltage (continuous dc), all trigger modes

(V_D= 12V, R_L= 30Ω)

V_GT

1.35

2.5

Volts

Ω, T

(V_D= Rated V_DRM, R_L= 125

_C= 100°C)

0.2

Holding current

I_H

µs

(V_D= 12V, gate open, I_T= 150mA)

Gate controlled turn on time

t_gt

(V_D= Rated V_DRM, I_TM= 45A, I_GT= 200mA, rise time = 0.1µs)

1.7

Rev. 20130205

12 3

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