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by MAC223FP/D
SEMICONDUCTOR TECHNICAL DATA
Silicon Bidirectional Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as lighting systems,
heater controls, motor controls and power supplies; or wherever full-wave silicon-
gate-controlled devices are needed.
ISOLATED TRIACs
THYRISTORS
25 AMPERES RMS
200 thru 800 VOLTS
•
•
•
Off-State Voltages to 800 Volts
All Diffused and Glass Passivated Junctions for Parameter Uniformity and Stability
Small, Rugged Thermowatt Construction for Thermal Resistance and High Heat
Dissipation
•
Gate Triggering Guaranteed in Three Modes (MAC223FP Series) or
Four Modes (MAC223AFP Series)
MT2
MT1
G
CASE 221C-02
STYLE 3
MAXIMUM RATINGS (T = 25° unless otherwise noted.)
J
Rating
Symbol
Value
Unit
(1)
Peak Repetitive Off-State Voltage (T = –40 to +125°C,
V
DRM
Volts
J
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC223-4FP, MAC223A4FP
200
400
600
800
MAC223-6FP, MAC223A6FP
MAC223-8FP, MAC223A8FP
MAC223-10FP, MAC223A10FP
(2)
On-State RMS Current (T = +80°C) Full Cycle Sine Wave 50 to 60 Hz
I
25
Amps
Amps
C
T(RMS)
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, T = 80°C,
I
250
C
TSM
preceded and followed by rated current)
2
I t
2
A s
Circuit Fusing (t = 8.3 ms)
260
Peak Gate Power (t
2 µs)
P
20
Watts
Watt
Amps
Volts
Volts
°C
GM
Average Gate Power (T = +80°C, t
8.3 ms)
P
0.5
C
G(AV)
Peak Gate Current (t
Peak Gate Voltage (t
2 µs)
2 µs)
I
2
±10
GM
V
GM
RMS Isolation Voltage (T = 25°C, Relative Humidity
20%)
V
(ISO)
1500
A
Operating Junction Temperature
Storage Temperature Range
Mounting Torque
T
–40 to +125
–40 to +150
8
J
T
°C
stg
—
in. lb.
1. V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
DRM
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all T measurements is a point on the center lead of the package as close as possible to the plastic
C
body.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
1.2
2.2
60
Unit
°C/W
°C/W
°C/W
R
θJC
Thermal Resistance, Case to Sink
R
θCS
Thermal Resistance, Junction to Ambient
R
θJA
1
Motorola Thyristor Device Data
Motorola, Inc. 1995