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MAC16HCD_05

更新时间： 2024-09-08 04:10:31
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 63K
描述
Triacs Silicon Bidirectional Thyristors

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MAC16HCD_05 数据手册

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MAC16HCD, MAC16HCM,  
MAC16HCN  
Preferred Device  
Triacs  
Silicon Bidirectional Thyristors  
Designed primarily for full-wave ac control applications, such as  
motor controls, heating controls or dimmers; or wherever full−wave,  
silicon gate−controlled devices are needed.  
http://onsemi.com  
TRIACS  
16 AMPERES RMS  
400 thru 800 VOLTS  
Features  
• High Commutating di/dt and High Immunity to dv/dt @ 125°C  
• Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3  
• Blocking Voltage to 800 Volts  
MT2  
MT1  
• On−State Current Rating of 16 Amperes RMS at 80°C  
• High Surge Current Capability − 150 Amperes  
• Industry Standard TO−220AB Package for Ease of Design  
• Glass Passivated Junctions for Reliability and Uniformity  
• Pb−Free Packages are Available*  
G
MARKING  
DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
MAC16HCxG  
AYWW  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Off−State Voltage (Note 1)  
V
V
DRM,  
(T = −40 to 125°C, Sine Wave,  
V
J
RRM  
TO−220AB  
CASE 221A−09  
STYLE 4  
50 to 60 Hz, Gate Open)  
MAC16HCD  
1
400  
600  
800  
2
3
MAC16HCM  
MAC16HCN  
x
A
Y
= D, M, or N  
= Assembly Location  
= Year  
On−State RMS Current  
(Full Cycle Sine Wave 50 to 60 Hz;  
I
16  
A
A
T(RMS)  
T
= 80°C)  
C
WW = Work Week  
Peak Non-Repetitive Surge Current  
I
150  
G
= Pb−Free Package  
TSM  
(One Full Cycle, 60 Hz, T = 125°C)  
J
2
2
Circuit Fusing Consideration (t = 8.33 ms)  
I t  
93  
20  
A sec  
PIN ASSIGNMENT  
1
Main Terminal 1  
Peak Gate Power  
P
W
W
GM  
(Pulse Width ≤ 1.0 ms, T = 80°C)  
C
2
3
4
Main Terminal 2  
Gate  
Average Gate Power  
P
0.5  
G(AV)  
(t = 8.3 ms, T = 80°C)  
C
Main Terminal 2  
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to +125  
−40 to +150  
°C  
°C  
J
T
stg  
ORDERING INFORMATION  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Device  
Package  
Shipping  
MAC16HCD  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
MAC16HCDG  
TO−220AB  
(Pb−Free)  
1. V  
and V  
for all types can be applied on a continuous basis. Blocking  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
DRM  
RRM  
MAC16HCM  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
MAC16HCMG  
TO−220AB  
(Pb−Free)  
MAC16HCN  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
MAC16HCNG  
TO−220AB  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
December, 2005 − Rev. 1  
MAC16HC/D  
 
123456

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 		该三端双向可控硅主要用于全波交流控制应用，例如电机控制、加热控制与调光器；或用于需要全波硅
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