SEMICONDUCTOR TECHNICAL DATA
Silicon Bidirectional Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as solid-state relays,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
TRIACs
15 AMPERES RMS
200 thru 800 VOLTS
•
•
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
•
•
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Gate Triggering Guaranteed in Three Modes (MAC15 Series) or Four Modes
(MAC15A Series)
MT2
MT1
G
CASE 221A-04
(TO-220AB)
STYLE 4
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
J
Rating
Symbol
Value
Unit
(1)
Peak Repetitive Off-State Voltage
V
DRM
Volts
(Gate Open, T = –40 to +125°C)
MAC15-4, MAC15A4
MAC15-6, MAC15A6
MAC15-8, MAC15A8
MAC15-10, MAC15A10
200
400
600
800
J
Peak Gate Voltage
V
10
15
Volts
GM
On-State Current RMS
Full Cycle Sine Wave 50 to 60 Hz (T = +90°C)
I
Amps
T(RMS)
C
2
2
Circuit Fusing (t = 8.3 ms)
Peak Surge Current
(One Full Cycle, 60 Hz, T = +80°C)
Preceded and followed by rated current
I t
93
A s
I
150
Amps
TSM
C
Peak Gate Power (T = +80°C, Pulse Width = 2 µs)
P
20
0.5
2
Watts
Watt
Amps
°C
C
GM
Average Gate Power (T = +80°C, t = 8.3 ms)
P
G(AV)
C
Peak Gate Current
I
GM
Operating Junction Temperature Range
Storage Temperature Range
T
–40 to +125
–40 to +150
J
T
°C
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
2
°C/W
θJC
1. V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
DRM
voltage ratings of the devices are exceeded.
REV 1
3–59
Motorola Thyristor Device Data