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MAC15A8-AN PDF预览

MAC15A8-AN

更新时间: 2024-11-06 13:10:15
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摩托罗拉 - MOTOROLA 触发装置可控硅三端双向交流开关
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MAC15A8-AN 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
Silicon Bidirectional Triode Thyristors  
. . . designed primarily for full-wave ac control applications, such as solid-state relays,  
motor controls, heating controls and power supplies; or wherever full-wave silicon  
gate controlled solid-state devices are needed. Triac type thyristors switch from a  
blocking to a conducting state for either polarity of applied anode voltage with positive  
or negative gate triggering.  
TRIACs  
15 AMPERES RMS  
200 thru 800 VOLTS  
Blocking Voltage to 800 Volts  
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity  
and Stability  
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat  
Dissipation and Durability  
Gate Triggering Guaranteed in Three Modes (MAC15 Series) or Four Modes  
(MAC15A Series)  
MT2  
MT1  
G
CASE 221A-04  
(TO-220AB)  
STYLE 4  
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Peak Repetitive Off-State Voltage  
V
DRM  
Volts  
(Gate Open, T = –40 to +125°C)  
MAC15-4, MAC15A4  
MAC15-6, MAC15A6  
MAC15-8, MAC15A8  
MAC15-10, MAC15A10  
200  
400  
600  
800  
J
Peak Gate Voltage  
V
10  
15  
Volts  
GM  
On-State Current RMS  
Full Cycle Sine Wave 50 to 60 Hz (T = +90°C)  
I
Amps  
T(RMS)  
C
2
2
Circuit Fusing (t = 8.3 ms)  
Peak Surge Current  
(One Full Cycle, 60 Hz, T = +80°C)  
Preceded and followed by rated current  
I t  
93  
A s  
I
150  
Amps  
TSM  
C
Peak Gate Power (T = +80°C, Pulse Width = 2 µs)  
P
20  
0.5  
2
Watts  
Watt  
Amps  
°C  
C
GM  
Average Gate Power (T = +80°C, t = 8.3 ms)  
P
G(AV)  
C
Peak Gate Current  
I
GM  
Operating Junction Temperature Range  
Storage Temperature Range  
T
–40 to +125  
–40 to +150  
J
T
°C  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
R
2
°C/W  
θJC  
1. V  
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the  
DRM  
voltage ratings of the devices are exceeded.  
REV 1  
3–59  
Motorola Thyristor Device Data  

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