SEMICONDUCTOR TECHNICAL DATA
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as solid-state relays,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
ISOLATED TRIACs
THYRISTORS
15 AMPERES RMS
200 thru 800 VOLTS
•
•
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
•
•
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Gate Triggering Guaranteed in Three Modes (MAC15FP Series) or Four Modes
(MAC15AFP Series)
MT2
MT1
CASE 221C-02
STYLE 3
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
J
Rating
Symbol
Value
Unit
(1)
Repetitive Peak Off-State Voltage (T = –40 to +125°C,
V
DRM
Volts
J
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC15-4FP, MAC15A4FP
200
400
600
800
MAC15-6FP, MAC15A6FP
MAC15-8FP, MAC15A8FP
MAC15-10FP, MAC15A10FP
(2)
On-State RMS Current (T = +80°C)
I
15
12
Amps
Amps
C
T(RMS)
Full Cycle Sine Wave 50 to 60 Hz (T = +95°C)
C
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, T = +80°C)
preceded and followed by rated current
I
150
C
TSM
Peak Gate Power (T = +80°C, Pulse Width = 2 µs)
P
20
Watts
Watt
Amps
Volts
Volts
°C
C
GM
Average Gate Power (T = +80°C, t = 8.3 ms)
P
0.5
2
C
G(AV)
Peak Gate Current
Peak Gate Voltage
I
GM
V
GM
10
RMS Isolation Voltage (T = 25°C, Relative Humidity
20%)
V
(ISO)
1500
A
Operating Junction Temperature
Storage Temperature Range
T
–40 to +125
–40 to +150
J
T
°C
stg
1. V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
DRM
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all T measurements is a point on the center lead of the package as close as possible to the plastic
C
body.
3–63
Motorola Thyristor Device Data