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MAC15AFP PDF预览

MAC15AFP

更新时间: 2024-11-05 22:46:31
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 可控硅三端双向交流开关
页数 文件大小 规格书
4页 84K
描述
ISOLATED TRIACs THYRISTORS 15 AMPERES RMS 200 thru 800 VOLTS

MAC15AFP 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
Silicon Bidirectional Thyristors  
. . . designed primarily for full-wave ac control applications, such as solid-state relays,  
motor controls, heating controls and power supplies; or wherever full-wave silicon  
gate controlled solid-state devices are needed. Triac type thyristors switch from a  
blocking to a conducting state for either polarity of applied anode voltage with positive  
or negative gate triggering.  
ISOLATED TRIACs  
THYRISTORS  
15 AMPERES RMS  
200 thru 800 VOLTS  
Blocking Voltage to 800 Volts  
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity  
and Stability  
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat  
Dissipation and Durability  
Gate Triggering Guaranteed in Three Modes (MAC15FP Series) or Four Modes  
(MAC15AFP Series)  
MT2  
MT1  
CASE 221C-02  
STYLE 3  
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Repetitive Peak Off-State Voltage (T = –40 to +125°C,  
V
DRM  
Volts  
J
1/2 Sine Wave 50 to 60 Hz, Gate Open)  
MAC15-4FP, MAC15A4FP  
200  
400  
600  
800  
MAC15-6FP, MAC15A6FP  
MAC15-8FP, MAC15A8FP  
MAC15-10FP, MAC15A10FP  
(2)  
On-State RMS Current (T = +80°C)  
I
15  
12  
Amps  
Amps  
C
T(RMS)  
Full Cycle Sine Wave 50 to 60 Hz (T = +95°C)  
C
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, T = +80°C)  
preceded and followed by rated current  
I
150  
C
TSM  
Peak Gate Power (T = +80°C, Pulse Width = 2 µs)  
P
20  
Watts  
Watt  
Amps  
Volts  
Volts  
°C  
C
GM  
Average Gate Power (T = +80°C, t = 8.3 ms)  
P
0.5  
2
C
G(AV)  
Peak Gate Current  
Peak Gate Voltage  
I
GM  
V
GM  
10  
RMS Isolation Voltage (T = 25°C, Relative Humidity  
20%)  
V
(ISO)  
1500  
A
Operating Junction Temperature  
Storage Temperature Range  
T
–40 to +125  
–40 to +150  
J
T
°C  
stg  
1. V  
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the  
DRM  
voltage ratings of the devices are exceeded.  
2. The case temperature reference point for all T measurements is a point on the center lead of the package as close as possible to the plastic  
C
body.  
3–63  
Motorola Thyristor Device Data  

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