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MAC15A8FPG

更新时间： 2024-11-06 21:16:43
品牌 Logo 应用领域
安森美 - ONSEMI 局域网三端双向交流开关
页数 文件大小 规格书
6页 174K
描述
600V, 15A, 4 QUADRANT LOGIC LEVEL TRIAC, GREEN, ISOLATED TO-220FP, 3 PIN

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中文翻译

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MAC15A8FPG 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：TO-220FP包装说明：GREEN, ISOLATED TO-220FP, 3 PIN
针数：3Reach Compliance Code：compliant
HTS代码：8541.30.00.80风险等级：5.74
外壳连接：ISOLATED配置：SINGLE
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大均方根通态电流：15 A断态重复峰值电压：600 V
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
触发设备类型：4 QUADRANT LOGIC LEVEL TRIACBase Number Matches：1

MAC15A8FPG 数据手册

 浏览型号MAC15A8FPG的Datasheet PDF文件第2页浏览型号MAC15A8FPG的Datasheet PDF文件第3页浏览型号MAC15A8FPG的Datasheet PDF文件第4页浏览型号MAC15A8FPG的Datasheet PDF文件第5页浏览型号MAC15A8FPG的Datasheet PDF文件第6页 
MAC15A6FP, MAC15A8FP,  
MAC15A10FP  
Preferred Device  
Triacs  
Silicon Bidirectional Thyristors  
Designed primarily for full-wave ac control applications, such as  
solid-state relays, motor controls, heating controls and power supplies;  
or wherever full-wave silicon gate controlled solid-state devices are  
needed. Triac type thyristors switch from a blocking to a conducting  
state for either polarity of applied main terminal voltage with positive  
or negative gate triggering.  
http://onsemi.com  
(
)
ISOLATED TRIAC  
15 AMPERES RMS  
400 thru 800 VOLTS  
• Blocking Voltage to 800 Volts  
• All Diffused and Glass Passivated Junctions for Greater Parameter  
Uniformity and Stability  
• Small, Rugged, Thermowatt Construction for Low Thermal  
Resistance, High Heat Dissipation and Durability  
• Gate Triggering Guaranteed in Four Modes  
MT2  
MT1  
•
Indicates UL Registered — File #E69369  
G
• Device Marking: Logo, Device Type, e.g., MAC15A6FP, Date Code  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Peak Repetitive Off−State Voltage  
V
DRM,  
Volts  
(T = −40 to +125°C, Sine Wave 50 to  
J
V
RRM  
60 Hz, Gate Open)  
MAC15A6FP  
MAC15A8FP  
MAC15A10FP  
400  
600  
800  
(2)  
On-State RMS Current (T = +80°C)  
Full Cycle Sine Wave 50 to 60 Hz  
(T = +95°C)  
C
I
15  
Amps  
Amps  
C
T(RMS)  
12  
1
2
Peak Nonrepetitive Surge Current  
(One Full Cycle Sine Wave,  
I
150  
3
TSM  
ISOLATED TO−220 Full Pack  
CASE 221C  
60 Hz, T = +80°C)  
C
Preceded and followed by rated current  
Circuit Fusing (t = 8.3 ms)  
Peak Gate Power  
STYLE 3  
2
2
I t  
93  
20  
A s  
P
Watts  
Watt  
Amps  
Volts  
Volts  
°C  
GM  
PIN ASSIGNMENT  
Main Terminal 1  
Main Terminal 2  
Gate  
(T = +80°C, Pulse Width = 2.0 μs)  
C
1
2
3
Average Gate Power  
(T = +80°C, t = 8.3 ms)  
C
P
0.5  
2.0  
G(AV)  
Peak Gate Current  
(Pulse Width v 1.0 μsec; T = 80°C)  
I
GM  
C
ORDERING INFORMATION  
Peak Gate Voltage  
(Pulse Width v 1.0 μsec; T = 80°C)  
V
10  
GM  
C
Device  
Package  
Shipping  
RMS Isolation Voltage (T = 25°C,  
Relative Humidity p 20%)  
V
1500  
A
(ISO)  
MAC15A6FP  
MAC15A8FP  
ISOLATED TO220FP 500/Box  
ISOLATED TO220FP 500/Box  
ISOLATED TO220FP 500/Box  
(
)
Operating Junction Temperature  
T
J
−40 to  
+125  
MAC15A10FP  
Storage Temperature Range  
T
stg  
−40 to  
°C  
+150  
Preferred devices are recommended choices for future use  
(1) V  
and V  
for all types can be applied on a continuous basis. Blocking  
and best overall value.  
DRM  
RRM  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
(2) The case temperature reference point for all T measurements is a point on  
C
the center lead of the package as close as possible to the plastic body.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
August, 2006 − Rev. 2  
MAC15A6FP/D  
123456

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