Datasheet > MAAM71200-H1

MAAM71200-H1

更新时间： 2024-11-08 22:05:15

品牌	Logo	应用领域
泰科 - TE		放大器射频微波
页数	文件大小	规格书
2页	99K
描述
Low Noise GaAs MMIC Amplifier 7.5 - 12 GHz

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技术参数
数据手册

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MAAM71200-H1 技术参数

生命周期：	Transferred	包装说明：	CERAMIC, CR-16, 6 PIN
Reach Compliance Code：	unknown	风险等级：	5.14
Is Samacsys：	N	安装特点：	SURFACE MOUNT
端子数量：	6	最高工作温度：	100 °C
最低工作温度：	-50 °C	封装主体材料：	CERAMIC
封装等效代码：	LCC6,.4X.32,115	电源：	4 V
子类别：	RF/Microwave Amplifiers	最大压摆率：	55 mA
表面贴装：	YES	技术：	GAAS
Base Number Matches：	1

MAAM71200-H1 数据手册

Low Noise GaAs MMIC Amplifier

7.5 - 12 GHz

MAAM71200-H1

V 2.00

Features

CR-16

●

2.7 dB Typical Noise Figure

●

15.5 dB Typical Gain

●

Single Bias Supply

●

Low Current Consumption

●

DC Decoupled RF Input and Output

●

Ceramic Package

Description

M/A-COM’s MAAM71200-H1 is a wide band, low noise

GaAs MMIC amplifier enclosed in a leadless ceramic

package¹. The MAAM71200-H1 is a packaged version of

M/A-COM’s MAAM71200 low noise MMIC amplifier chip.

The fully monolithic design operates in 50 ohms without

the need for external components.

Dimensions are in inches.

The MAAM71200-H1 is ideally suited for microstrip

assemblies where wire or ribbon bonds are used for inter-

connects. Typical applications include radar, EW and

communication systems.

The MAAM71200 is fabricated using a mature 0.5-micron

gate length GaAs process for increased reliability and per-

formance repeatability.

Typical Electrical Specifications, T = +25°C, V

= 4 V

Parameter

Units

Min.

Typ.

Max.

Gain

14.5

15.5

2.7

Noise Figure

3.5

Input VSWR

2.0:1

1.8:1

Output VSWR

Output 1dB Compression Point

Third Order Intercept Point

Reverse Isolation

Bias Current (IDD)

dBm

1.Consult factory for a leaded ceramic package version.

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