Datasheet > MAAMGM0003-DIE

MAAMGM0003-DIE

更新时间： 2024-01-16 23:17:07

品牌	Logo	应用领域
泰科 - TE		放大器射频微波
页数	文件大小	规格书
7页	269K
描述
0.4W Variable Distributed Amplifier 1.0 - 15.0 GHz

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中文翻译

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技术参数
数据手册

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MAAMGM0003-DIE 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.84	Is Samacsys：	N
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	7.5 dB	最大输入功率 (CW)：	25 dBm
最大工作频率：	15000 MHz	最小工作频率：	1000 MHz
射频/微波设备类型：	WIDE BAND MEDIUM POWER	最大电压驻波比：	2
Base Number Matches：	1

MAAMGM0003-DIE 数据手册

RO-P-DS-3046 - -

0.4W Variable Distributed Amplifier

1.0 – 15.0 GHz

Preliminary Information

Features

1.0 - 15.0 GHz GaAs MMIC Amplifier

♦ 1.0 to 15.0 GHz Operation

♦ 0.4 Watt Saturated Output Power Level

♦ Variable Gain Control

♦ Select at Test Biasing

♦ Variable Drain Voltage (5-8V) Operation

♦ Self-Aligned MSAG^®MESFET Process

Primary Applications

♦ EW

♦ Radar

Description

The MAAMGM0003-Die is a 0.4W Distributed Amplifier

with on-chip bias networks and variable gain control. This

product is fully matched to 50 ohms on both the input and

output. The MMIC can be used as a broadband amplifier

stage or as a driver stage in high power applications.

Each device is 100% RF tested on wafer to ensure

performance compliance. The part is fabricated using M/

A-COM’s repeatable, high performance and highly reli-

able GaAs Multifunction Self-Aligned Gate (MSAG^®)

MESFET Process. This process features silicon oxyni-

Electrical Characteristics: T_B= 40°C¹, Z₀= 50Ω, V_DD= 7V, V_GG= -2V, P_in= 20 dBm

Parameter

Symbol

Typical

Units

Bandwidth

1.0-15.0

GHz

Output Power

7.5

dBm

P_OUT

PAE

Power Added Efficiency

1-dB Compression Point

Small Signal Gain

dBm

P1dB

OTOI

VSWR

Output TOI

dBm

Input VSWR

2:1

Gate Current

Drain Current

< 8

I_GG

I_DD

< 480

1. T_B= MMIC Base Temperature

12 3 4 5 6 7

中文翻译

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