Datasheet > MAAMGM0007-DIE

MAAMGM0007-DIE

更新时间： 2024-09-22 04:17:07

品牌	Logo	应用领域
泰科 - TE		放大器
页数	文件大小	规格书
6页	319K
描述
2.0-18.0 GHz Distributed Amp/Gain Block

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MAAMGM0007-DIE 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.84	其他特性：	HIGH RELIABILITY
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	8 dB	最大输入功率 (CW)：	21 dBm
最大工作频率：	18000 MHz	最小工作频率：	2000 MHz
射频/微波设备类型：	WIDE BAND MEDIUM POWER	最大电压驻波比：	2
Base Number Matches：	1

MAAMGM0007-DIE 数据手册

Preliminary Datasheet

RO-P-DS-3084 A

2.0-18.0 GHz Distributed Amp/Gain Block

Features

MAAMGM0007-DIE

♦ 0.15 Watt Saturated Output Power Level

♦ Single Bias Operation

♦ Variable Drain Voltage (4-6V) Operation

♦ GaAs MSAG™ Process

♦ Proven Manufacturability and Reliability

No Airbridges

^ꢀPolyimide Scratch Protection

ꢀ

^ꢀNo Hydrogen Poisoning Susceptibility

Description

The MAAMGM0007-Die is a single stage distributed amplifier

with single bias operation. This product is fully matched to 50

ohms on both the input and output. It can be used as a driver

stage in high power applications.

Primary Applications

Fabricated using M/A-COM’s repeatable, high performance and

highly reliable GaAs Multifunction Self-Aligned Gate MESFET

Process, each device is 100% RF tested on wafer to ensure

performance compliance.

♦ Test Equipment

♦ Electronic Warfare

♦ Radar

M/A-COM’s MSAG™ process features robust silicon-like manu-

facturing processes, planar processing of ion implanted transis-

tors, multiple implant capability enabling power, low-noise, switch

and digital FETs on a single chip, and polyimide scratch protec-

tion for ease of use with automated manufacturing processes.

The use of refractory metals and the absence of platinum in the

gate metal formulation prevents hydrogen poisoning when em-

ployed in hermetic packaging.

Electrical Characteristics: T_B= 40°C¹, Z₀= 50Ω, V_DD= 5V, P_in= 16 dBm

Parameter

Symbol

Typical

Units

Bandwidth

2.0-18.0

GHz

Output Power

1-dB Compression Point

Small Signal Gain

Noise Figure

dBm

P_OUT

P_1dB

Input VSWR

VSWR

I_DD

2.0:1

< 250

Output VSWR

Drain Supply Current

1. T_B= MMIC Base Temperature

12 3 4 5 6

中文翻译

下载PDF

与MAAMGM0007-DIE相关器件

型号	品牌	获取价格	描述	数据表
MAAMML0016	TE	获取价格	Ka Band Connectorised Amplifier: 24 - 30 GHz
MAAMML0017	TE	获取价格	Ka Band Connectorised Amplifier: 30 - 35 GHz
MAAMML0018	TE	获取价格	Variable Gain Control, X Band Connectorised Amplifier: 8 - 12 GHz
MAAMML0019	TE	获取价格	X -> Ka Band, Connectorised Tripler: 8 - 10 GHz -> 24 - 30 GHz
MAAMML0020	TE	获取价格	X -> Ka Band, Connectorised Tripler: 9 - 11 GHz -> 27 - 33 GHz
MAAMML0021	TE	获取价格	X -> Ka Band, Connectorised Tripler: 10 - 12 GHz -> 30 - 36 GHz
MAAMMSS0017TR	TE	获取价格	Broadband IF Driver Amplifier 50 - 450 MHz
MAAMSS0001	TE	获取价格	Low Noise CATV Amplifier 50 - 870 MHz
MAAMSS00014SMB-01	TE	获取价格	Broadband Driver Amplifier 500 - 2400 MHz
MAAMSS00014SMB-02	TE	获取价格	Broadband Driver Amplifier 500 - 2400 MHz