Preliminary Specifications
GaAs MMIC Power Amplifier
2 - 6 GHz
MAAM26100-P1
V1.A
Features
CR-15
●
+30 dBm Saturated Output Power
-C-
.70
●
18 dB Typical Gain
30% Power Added Efficiency
.530
●
4X .06 X 45°
.085
CHAMFER
●
On-Chip Bias Network
10 9
8
7 6
10X .050 MIN
-B-
●
DC Decoupled RF Input and Output
●
.159
High Performance Ceramic Bolt Down Package
.328 ±.010
.318 ±.010
Description
2X
Ø
.096 THRU
M/A-COM’s MAAM26100-P1 is a GaAs MMIC two stage
high efficiency power amplifier in a high performance
bolt down ceramic package. The MAAM26100-P1 is a
fully monolithic design for operation in 50-ohm systems,
with an on-chip negative bias network which eliminates
the need for external bias circuitry.
1
2
4
5
3
M
Ø
.004
A
B
C
.010 SQ.
ORIENTATION TAB
10X.010 ±.003
±.010
.115
4X.050
4X .100
.33
CERAMIC
.040
BASE PLATE
.005±.002
.090MAX
-A-
.020
The MAAM26100-P1 is ideally suited for driver amplifiers
and transmitter outputs in Electronic Warfare Jammers,
Missile Subsystems and Phased Array Radars.
Notes: (unless otherwise specified)
1. Dimensions are inches.
2. Tolerance: in .xxx = ±.010
M/A-COM’s MAAM26100-P1 is fabricated using a mature
0.5-micron gate length GaAs process. The process
features full passivation for increased performance
reliability.
Ordering Information
Part Number
Package
MAAM26100-P1
Ceramic Bolt Down
Typical Electrical Specifications, T = +25°C, V = +8 V, V = -5 V
A
DD
GG
Parameter
Test Conditions
Units
Min.
Typ.
18
Max.
Small Signal Gain
Input VSWR
PIN ≤ -10 dBm
PIN ≤ -10 dBm
PIN ≤ -10 dBm
2 - 6 GHz
2 - 6 GHz
2 - 6 GHz
2 - 6 GHz
2 - 6 GHz
dB
2.0:1
2.2:1
+30
30
Output VSWR
Output Power
Power Added Efficiency
Output IP3
PIN = +15 dBm
PIN = +15 dBm
dBm
%
2, 5 & 6 GHz
dBm
40
The Preliminary Specifications Data Sheet Contains Typical Electrical Specifications Which May Change Prior to Final Introduction.
M/A-COM, Inc.
1
North America: Tel. (800) 366-2266
Fax (800) 618-8883
■
Asia/Pacific: Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
■
Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020