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MAAM37000-A1G

更新时间： 2024-09-22 14:53:31
品牌 Logo 应用领域
MACOM /
页数 文件大小 规格书
4页 642K
描述
Low Noise

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中文翻译

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MAAM37000-A1G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SOP8(UNSPEC)
Reach Compliance Code：compliant风险等级：5.08
Is Samacsys：N其他特性：HIGH RELIABILITY
特性阻抗：50 Ω构造：COMPONENT
增益：15 dB最大输入功率 (CW)：20 dBm
安装特点：SURFACE MOUNT端子数量：8
最大工作频率：7000 MHz最小工作频率：3500 MHz
最高工作温度：100 °C最低工作温度：-55 °C
封装主体材料：CERAMIC封装等效代码：SOP8(UNSPEC)
电源：4 V射频/微波设备类型：WIDE BAND LOW POWER
子类别：RF/Microwave Amplifiers最大压摆率：110 mA
表面贴装：YES技术：GAAS
最大电压驻波比：2Base Number Matches：1

MAAM37000-A1G 数据手册

 浏览型号MAAM37000-A1G的Datasheet PDF文件第2页浏览型号MAAM37000-A1G的Datasheet PDF文件第3页浏览型号MAAM37000-A1G的Datasheet PDF文件第4页 
MAAM37000-A1  
Low Noise GaAs MMIC Amplifier  
3.5 - 7.0 GHz  
Rev. V8  
Features  
Functional Schematic  
Low Noise Figure: 2.2 dB Typical  
High Gain: 17 dB Typical  
Gain Flatness: +0.5 dB  
GND  
1
8
7
6
5
VDD  
GND  
2
Single Supply: +4 V  
GND  
No External Components Required  
DC Decoupled RF Input and Output  
Lead-Free 8-Lead Ceramic Package  
RoHS* Compliant and 260°C Reflow Compatible  
3
4
RF IN  
RF OUT  
GND  
GND  
Description  
The MAAM37000-A1 is a wide-band, low noise,  
MMIC amplifier housed in a small, lead-free, 8-lead  
ceramic package. It includes two integrated gain  
stages and employs series inductive feedback to  
obtain excellent noise figure and a good, 50 Ω, input  
and output impedance match over the entire  
frequency band. The MAAM37000-A1 operates  
from a single +4 V supply. It is fully monolithic,  
requires no external components, and is provided in  
a user-friendly, microwave package.  
Pin Configuration1  
Pin No.  
Function  
Ground  
Ground  
RF Input  
Ground  
Pin No.  
Function  
Ground  
RF Output  
Ground  
VDD  
1
2
3
4
5
6
7
8
1. The package bottom must be connected to RF and DC  
ground.  
The MAAM37000-A1 performs well as a low noise  
amplifier in receive applications and as a driver or  
buffer amplifier where high gain, excellent linearity  
and low power consumption are important. Because  
of its wide bandwidth, the MAAM37000-A1 can be  
used in numerous commercial and government  
system applications, such as TVRO, VSAT, missile  
guidance and radar.  
Absolute Maximum Ratings 2,3  
Parameter  
VDD  
Absolute Maximum  
+7 V  
Input Power  
+20 dBm  
The MAAM37000-A1 is manufactured in-house  
Current  
150 mA  
using  
a
reliable, 0.5-micron, GaAs MESFET  
Channel Temperature  
Operating Temperature4  
Storage Temperature  
+150°C  
process. This product is 100% RF tested to ensure  
compliance to performance specifications.  
-55°C to +100°C  
-65°C to +150°C  
2. Exceeding any one or combination of these limits may cause  
permanent damage to this device.  
Ordering Information  
3. M/A-COM Technology does not recommend sustained  
operation near these survivability limits.  
4. Typical thermal resistance (jc) = +120°C/W  
Part Number  
MAAM37000-A1  
MAAM37000-A1G  
Package  
8-lead Ceramic (CR-3)  
Gull Wing (CR-10)  
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.  
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  
For further information and support please visit:  
https://www.macom.com/support  
1234

中文翻译

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MAAM37000-A1G 替代型号

型号 品牌 替代类型 描述 数据表
MAAM37000-A1 MACOM

完全替代

 Low Noise
MAAM37000 MACOM

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 GaAs MMIC

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