Datasheet > MAAM71200-H1

MAAM71200-H1

更新时间： 2024-11-26 14:54:19

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
4页	512K
描述
Low Noise

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技术参数
数据手册
替代型号

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MAAM71200-H1 技术参数

生命周期：	Active	包装说明：	LCC6,.4X.32,115
Reach Compliance Code：	compliant	风险等级：	5.14
Is Samacsys：	N	其他特性：	HIGH RELIABILITY
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	14.5 dB	最大输入功率 (CW)：	20 dBm
安装特点：	SURFACE MOUNT	端子数量：	6
最大工作频率：	12000 MHz	最小工作频率：	7500 MHz
最高工作温度：	100 °C	最低工作温度：	-50 °C
封装主体材料：	CERAMIC	封装等效代码：	LCC6,.4X.32,115
电源：	4 V	射频/微波设备类型：	WIDE BAND LOW POWER
子类别：	RF/Microwave Amplifiers	最大压摆率：	55 mA
表面贴装：	YES	技术：	GAAS
最大电压驻波比：	1.8	Base Number Matches：	1

MAAM71200-H1 数据手册

MAAM71200-H1

Low Noise GaAs MMIC Power Amplifier

7.5 - 12.0 GHz

Rev. V7

Features

Functional Diagram



Noise Figure: 2.7 dB Typical

Gain: 15.5 dB Typical

Single Bias Supply

Low Current Consumption

DC Decoupled RF Input and Output

Ceramic Package

V_DD

RF IN

RF OUT

Description

The MAAM71200-H1 is a wide band, low noise

GaAs MMIC amplifier enclosed in a leadless

ceramic package.

The MAAM71200-H1 is a

packaged version of The MAAM71200 low noise

MMIC amplifier chip. The fully monolithic design

operates in 50 Ω without the need for external

components.

1. Case must be electrically connected to RF and DC ground.

2. The RF bond inductance from the transmission line to the

package is assumed to be 0.25 nH. Variations in bond

inductance will result in variations in VSWR and gain slope.

A small capacitive stub may be needed depending on the

inductance realized in the final assembly.

3. Nominal bias is obtained by setting V_DD= 4 V.

4. Increasing V_DDfrom 4 volts to 6 volts increases output power

and high frequency bandwidth.

The MAAM71200-H1 is ideally suited for microstrip

assemblies where wire or ribbon bonds are used for

interconnects. Typical applications include radar,

EW and communication systems.

The MAAM71200-H1 is fabricated using a mature

0.5-micron gate length GaAs process for increased

reliability and performance repeatability.

Absolute Maximum Ratings ^5,6

Parameter

Input Power

Absolute Maximum

+20 dBm

Ordering Information

Part Number

Package

V_DD

+7 V

Junction Temperature

Thermal Resistance

Storage Temperature

+150°C

MAAM71200-H1

Bulk Packaging

+175°C/W

-65°C to +150°C

5. Exceeding any one or combination of these limits may cause

permanent damage to this device.

6. M/A-COM Technology does not recommend sustained

operation near these survivability limits.

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

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MAAM71200-H1 替代型号

型号	品牌	替代类型	描述	数据表
MAAM71200	MACOM	功能相似	Low Noise
MAAM71100	MACOM	功能相似	Power, GaAs MMIC

与MAAM71200-H1相关器件

型号	品牌	获取价格	描述	数据表
MAAM71200-H1_V7	TE	获取价格	Low Noise GaAs MMIC Power Amplifier
MAAM-8317-CA7503	TE	获取价格	Cascadable Amplifier 10 to 500 MHz
MAAMGM0002	TE	获取价格	Amplifier, Distributed, 0.1W 1.0-18.0 GHz
MAAMGM0002-DIE	TE	获取价格	Amplifier, Distributed, 0.1W 1.0-18.0 GHz
MAAMGM0002-DIE-SMB	TE	获取价格	Amplifier, Distributed, 0.1W 1.0-18.0 GHz
MAAMGM0002-SMB	TE	获取价格	Amplifier, Distributed, 0.1W 1.0-18.0 GHz
MAAMGM0003-DIE	TE	获取价格	0.4W Variable Distributed Amplifier 1.0 - 15.0 GHz
MAAMGM0007-DIE	TE	获取价格	2.0-18.0 GHz Distributed Amp/Gain Block
MAAMML0016	TE	获取价格	Ka Band Connectorised Amplifier: 24 - 30 GHz
MAAMML0017	TE	获取价格	Ka Band Connectorised Amplifier: 30 - 35 GHz

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