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MAAM28000-A1G PDF预览

MAAM28000-A1G

更新时间: 2024-11-10 14:53:07
品牌 Logo 应用领域
MACOM /
页数 文件大小 规格书
4页 588K
描述
Wide Band GaAs MMIC

MAAM28000-A1G 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:SOP8(UNSPEC)
Reach Compliance Code:compliant风险等级:5.1
Is Samacsys:N特性阻抗:50 Ω
构造:COMPONENT增益:14 dB
最大输入功率 (CW):20 dBm安装特点:SURFACE MOUNT
端子数量:8最大工作频率:8000 MHz
最小工作频率:2000 MHz最高工作温度:100 °C
最低工作温度:-55 °C封装主体材料:CERAMIC
封装等效代码:SOP8(UNSPEC)电源:10 V
射频/微波设备类型:WIDE BAND LOW POWER子类别:RF/Microwave Amplifiers
最大压摆率:100 mA表面贴装:YES
技术:GAAS最大电压驻波比:1.5
Base Number Matches:1

MAAM28000-A1G 数据手册

 浏览型号MAAM28000-A1G的Datasheet PDF文件第2页浏览型号MAAM28000-A1G的Datasheet PDF文件第3页浏览型号MAAM28000-A1G的Datasheet PDF文件第4页 
MAAM28000-A1  
Wide Band GaAs MMIC Amplifier  
2.0 - 8.0 GHz  
Rev. V8  
Features  
Schematic  
Gain: 17 dB Typical  
Broadband Gain Flatness: ± 0.5 dB Typical  
Single Supply: +10 V  
No External Components Required  
DC Decoupled RF Input and Output  
Lead-Free 8-Lead Ceramic Package  
RoHS* Compliant and 260°C Reflow Compatible  
GND  
GND  
1
2
8
7
6
5
VDD  
GND  
3
4
RF IN  
RF OUT  
GND  
GND  
Description  
The MAAM28000-A1 is a wide band, MMIC amplifier  
housed in  
a
small, lead-free, 8-lead  
ceramic package. It includes two distributed gain  
stages to obtain flat gain and a good, 50-ohm input  
and output impedance match over a very wide  
bandwidth. The MAAM28000-A1 operates from a  
single +10 V supply. It is fully monolithic, requires  
no external components and is provided in a low-  
cost, user-friendly, microwave package.  
Pin Configuration1  
Pin No.  
Function  
Ground  
Ground  
RF Input  
Ground  
Pin No.  
Function  
Ground  
RF Output  
Ground  
VDD  
1
2
3
4
5
6
7
8
The MAAM28000-A1 performs well as a generic IF,  
driver or buffer amplifier where high gain, excellent  
linearity and low power consumption are important.  
Because of its wide bandwidth, the MAAM28000-A1  
can be used in numerous commercial and  
government system applications, such as satellite  
communications, RLL, EW and radar.  
1. The package bottom must be connected to RF and DC ground.  
Absolute Maximum Ratings 2,3  
Parameter  
VDD  
Absolute Maximum  
+14 V  
The MAAM28000-A1 is manufactured in-house  
using  
a
reliable, 0.5-micron, GaAs MESFET  
Input Power  
+20 dBm  
process. This product is 100% RF tested to ensure  
compliance to performance specifications.  
Current  
150 mA  
Channel Temperature  
Operating Temperature4  
Storage Temperature  
+150°C  
-55°C to +100°C  
-65°C to +150°C  
Ordering Information  
Part Number  
MAAM28000-A1  
MAAM28000-A1G  
Package  
2. Exceeding any one or combination of these limits may cause  
permanent damage to this device.  
3. M/A-COM Technology does not recommend sustained  
operation near these survivability limits.  
8-lead Ceramic (CR-3)  
Gull Wing (CR-10)  
4. Typical thermal resistance (jc) = +45°C/W  
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.  
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  
For further information and support please visit:  
https://www.macom.com/support  

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