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MAAM28000-A1 PDF预览

MAAM28000-A1

更新时间: 2024-09-20 22:05:15
品牌 Logo 应用领域
泰科 - TE 放大器
页数 文件大小 规格书
2页 129K
描述
Wide Band GaAs MMIC Amplifier 2-8 GHz

MAAM28000-A1 技术参数

是否Rohs认证:符合生命周期:Transferred
包装说明:CERAMIC, CR-3, 8 PINReach Compliance Code:unknown
风险等级:5.13Is Samacsys:N
安装特点:SURFACE MOUNT端子数量:8
最高工作温度:100 °C最低工作温度:-55 °C
封装主体材料:CERAMIC封装等效代码:FL8,.2
电源:10 V子类别:RF/Microwave Amplifiers
最大压摆率:100 mA表面贴装:YES
技术:GAASBase Number Matches:1

MAAM28000-A1 数据手册

 浏览型号MAAM28000-A1的Datasheet PDF文件第2页 
Wide Band GaAs MMIC Amplifier  
2-8 GHz  
MAAM28000-A1  
V 2.00  
Features  
CR-3  
High Gain: 17 dB  
Gain Flatness: ±0.5 dB  
Single Supply: +10 V  
No External Components Required  
DC Decoupled RF Input and Output  
Small, Low Cost 8-Lead Ceramic Package  
Description  
M/A-COM’s MAAM28000-A1 is a wide band, MMIC amplifier  
housed in a small 8-lead ceramic package. It includes two dis-  
tributed gain stages to obtain flat gain and a good, 50-ohm,  
input and output impedance match over a very wide  
bandwidth. The MAAM28000-A1 operates from a single  
+10 V supply. It is fully monolithic, requires no external  
components, and is provided in a low-cost, user-friendly,  
microwave package.  
The MAAM28000-A1 performs well as a generic IF, driver or  
buffer amplifier where high gain, excellent linearity and low  
power consumption are important. Because of its wide band-  
width, the MAAM28000-A1 can be used in numerous com-  
mercial and government system applications, such as satellite  
communications, RLL, EW and radar.  
Ordering Information  
Part Number  
Package  
MAAM28000-A1  
MAAM28000-A1G  
8-Lead Ceramic  
Gull Wing  
The MAAM28000-A1 is manufactured in-house using a reli-  
able, 0.5-micron, GaAs MESFET process. This product is  
100% RF tested to ensure compliance to performance  
specifications.  
Electrical Specifications  
Test Conditions:T = +25°C, Z = 50 , V  
= +10 V, P = -30 dBm  
A
O
DD  
IN  
Parameter  
Gain  
Test Conditions  
Units  
dB  
Min.  
14  
Typ.  
17  
Max.  
Noise Figure  
2 - 4 GHz  
4 - 6 GHz  
6 - 8 GHz  
dB  
dB  
dB  
6.5  
5.5  
4.5  
8.0  
6.5  
6.0  
Gain Flatness  
Input VSWR  
Output VSWR  
dB  
± 0.5  
1.6:1  
1.5:1  
+14  
+7  
Output 1 dB Compression  
dBm  
dBm  
dB  
Input IP  
3
Reverse Isolation  
Bias Current  
35  
70  
mA  
100  

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