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M95640-DW3TG PDF预览

M95640-DW3TG

更新时间: 2024-11-10 23:05:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
39页 553K
描述
64Kbit and 32Kbit Serial SPI Bus EEPROM With High Speed Clock

M95640-DW3TG 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:0.169 INCH, ROHS COMPLIANT, TSSOP-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.61
Is Samacsys:N其他特性:1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION
最大时钟频率 (fCLK):20 MHz数据保留时间-最小值:40
耐久性:1000000 Write/Erase CyclesJESD-30 代码:R-PDSO-G8
JESD-609代码:e4长度:4.4 mm
内存密度:65536 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:8
字数:8192 words字数代码:8000
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:8KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:5 V
认证状态:Not Qualified座面最大高度:1.2 mm
串行总线类型:SPI最大待机电流:0.000002 A
子类别:EEPROMs最大压摆率:0.003 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:3 mm
最长写入周期时间 (tWC):5 ms写保护:HARDWARE/SOFTWARE
Base Number Matches:1

M95640-DW3TG 数据手册

 浏览型号M95640-DW3TG的Datasheet PDF文件第2页浏览型号M95640-DW3TG的Datasheet PDF文件第3页浏览型号M95640-DW3TG的Datasheet PDF文件第4页浏览型号M95640-DW3TG的Datasheet PDF文件第5页浏览型号M95640-DW3TG的Datasheet PDF文件第6页浏览型号M95640-DW3TG的Datasheet PDF文件第7页 
M95640  
M95320  
64Kbit and 32Kbit Serial SPI Bus EEPROM  
With High Speed Clock  
FEATURES SUMMARY  
Compatible with SPI Bus Serial Interface  
Figure 1. Packages  
(Positive Clock SPI Modes)  
Single Supply Voltage:  
– 4.5 to 5.5V for M95xxx  
– 2.5 to 5.5V for M95xxx-W  
– 1.8 to 5.5V for M95xxx-R  
8
10MHz, 5MHz or 2MHz clock rate (depending  
on ordering options)  
1
5ms or 10ms Write Time (depending on  
ordering options)  
PDIP8 (BN)  
0.25 mm frame  
Status Register  
Hardware Protection of the Status Register  
BYTE and PAGE WRITE (up to 32 Bytes)  
Self-Timed Programming Cycle  
Adjustable Size Read-Only EEPROM Area  
Enhanced ESD Protection  
8
1
More than 100,000 or 1 million Erase/Write  
SO8 (MN)  
150 mil width  
Cycles (depending on ordering options)  
More than 40 Year Data Retention  
TSSOP8 (DW)  
169 mil width  
TSSOP14 (DL)  
169 mil width  
November 2003  
1/39  

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