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M95640-DWMB4G/K PDF预览

M95640-DWMB4G/K

更新时间: 2023-02-26 14:32:16
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管
页数 文件大小 规格书
39页 535K
描述
8KX8 SPI BUS SERIAL EEPROM, PDSO8, 2 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, UFDFP-8

M95640-DWMB4G/K 数据手册

 浏览型号M95640-DWMB4G/K的Datasheet PDF文件第2页浏览型号M95640-DWMB4G/K的Datasheet PDF文件第3页浏览型号M95640-DWMB4G/K的Datasheet PDF文件第4页浏览型号M95640-DWMB4G/K的Datasheet PDF文件第5页浏览型号M95640-DWMB4G/K的Datasheet PDF文件第6页浏览型号M95640-DWMB4G/K的Datasheet PDF文件第7页 
M95640-A125  
M95640-A145  
Automotive 64-Kbit serial SPI bus EEPROMs  
with high-speed clock  
Preliminary data  
Features  
Compatible with the Serial Peripheral Interface  
(SPI) bus  
Memory array  
SO8 (MN)  
150 mil width  
– 64 Kbits (8 Kbytes) of EEPROM  
– Page size: 32 bytes  
– Write protection by block: 1/4, 1/2 or whole  
memory  
– Additional Write lockable Page  
(Identification page)  
TSSOP8 (DW)  
169 mil width  
Extended temperature and voltage ranges  
– Up to 125 °C: 1.8 V to 5.5 V  
– Up to 145 °C: 2.5 V to 5.5 V  
High speed clock frequency  
– 20 MHz for V  
– 10 MHz for V  
4.5 V  
2.5 V  
CC ≥  
CC ≥  
– 5 MHz for V  
1.8 V  
CC ≥  
UFDFPN8 (MC)  
2 x 3 mm  
Schmitt trigger inputs for noise filtering  
Short Write cycle time  
– Byte Write within 4 ms  
– Page Write within 4 ms  
Write cycle endurance  
– 4 million Write cycles at 25 °C  
– 1.2 million Write cycles at 85 °C  
– 600 k Write cycles at 125 °C  
– 400 k Write cycles at 145 °C  
Data retention  
– 40 years at 55 °C  
– 100 years at 25 °C  
ESD Protection (Human Body Model)  
– 4000 V  
Packages  
– RoHS-compliant and halogen-free  
®
(ECOPACK2 )  
February 2012  
Doc ID 022579 Rev 2  
1/39  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.st.com  
1

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