Datasheet > M5M51008KV-70H

M5M51008KV-70H

更新时间： 2024-11-01 22:24:51

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
7页	90K
描述
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

M5M51008KV-70H 数据手册

MITSUBISHI LSIs

M5M51008CP,FP,VP,RV,KV,KR -55H, -70H,

-55X, -70X

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION

PIN CONFIGURATION (TOP VIEW)

The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS

static RAM organized as 131072 word by 8-bit which are

fabricated using high-performance quadruple-polysilicon and

double metal CMOS technology. The use of thin film transistor

(TFT) load cells and CMOS periphery result in a high density and

low power static RAM.

A16

A14

A12

VCC

A15

ADDRESS

INPUT

CHIP SELECT

INPUT

WRITE CONTROL

INPUT

They are low standby current and low operation current and ideal

for the battery back-up application.

28 A13

ADDRESS

INPUTS

The M5M51008CVP,RV,KV,KR are packaged in a 32-pin thin

small outline package which is a high reliability and high density

surface mount device(SMD). Two types of devices are available.

M5M51008CVP,KV(normal lead bend type package),

M5M51008CRV,KR(reverse lead bend type package).Using both

types of devices, it becomes very easy to design a printed circuit

board.

ADDRESS

INPUTS

26 A9

25 A11

OUTPUT ENABLE

24 OE _INPUT

ADDRESS

INPUT

CHIP SELECT

INPUT

23 A10

DQ8

DQ7

DQ1 13

DQ2

DATA

INPUTS/

DATA

INPUTS/

OUTPUTS

19 DQ6

FEATURES

OUTPUTS

DQ3 15

GND16

DQ5

DQ4

Power supply current

Access

Active

(1MHz)

(max)

Type name

time

stand-by

(max)

Outline 32P4(P), 32P2M-A(FP)

M5M51008CP,FP,VP,RV,KV,KR-55H

M5M51008CP,FP,VP,RV,KV,KR-70H

M5M51008CP,FP,VP,RV,KV,KR-55X

M5M51008CP,FP,VP,RV,KV,KR-70X

55ns

70ns

55ns

70ns

20µA

A11

A10

(Vcc=5.5V)

15mA

(1MHz)

8µA

(Vcc=5.5V)

0.1µA

A13

29 DQ8

(Vcc=3.0V typ)

DQ7

DQ6

Low stand-by current 0.1µA (typ.)

A15

VCC

DQ5

DQ4

GND

DQ3

DQ2

DQ1

Directly TTL compatible : All inputs and outputs

Easy memory expansion and power down by S1,S2

Data hold on +2V power supply

Three-state outputs : OR - tie capability

OE prevents data contention in the I/O bus

Common data I/O

M5M51008CVP,KV

A16 10

A14

Package

A12

M5M51008CP

M5M51008CFP

···········3· 2pin 600mil DIP

···········3· 2pin 525mil SOP

M5M51008CVP,RV ···········3· 2pin 8 X 20 mm²TSOP

M5M51008CKV,KR ···········3· 2pin 8 X 13.4 mm ²TSOP

APPLICATION

Small capacity memory units

Outline 32P3H-E(VP), 32P3K-B(KV)

18 A2

19 A1

20 A0

A12

A14

A16

VCC

A15

21 DQ1

DQ2

DQ3

GND

M5M51008CRV,KR

DQ4

DQ5

DQ6

DQ7

DQ8

A13

A10

A11

Outline 32P3H-F(RV), 32P3K-C(KR)

NC : NO CONNECTION

MITSUBISHI

ELECTRIC

12 3 4 5 6 7

中文翻译

下载PDF

与M5M51008KV-70H相关器件

型号	品牌	获取价格	描述	数据表
M5M51008KV-70L	MITSUBISHI	获取价格	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
M5M51008KV-70LL	MITSUBISHI	获取价格	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
M5M51008KV-70X	MITSUBISHI	获取价格	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
M5M51008P-10LL-I	MITSUBISHI	获取价格	Standard SRAM, 128KX8, 100ns, CMOS, PDIP32
M5M51008P-10LL-W	MITSUBISHI	获取价格	Standard SRAM, 128KX8, 100ns, CMOS, PDIP32, DIP-32
M5M51008P-10L-W	MITSUBISHI	获取价格	Standard SRAM, 128KX8, 100ns, CMOS, PDIP32, DIP-32
M5M51008P-12	MITSUBISHI	获取价格	Standard SRAM, 128KX8, 120ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32
M5M51008P-12L	MITSUBISHI	获取价格	Standard SRAM, 128KX8, 120ns, CMOS, PDIP32, DIP-32
M5M51008P-12LL	MITSUBISHI	获取价格	Standard SRAM, 128KX8, 120ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32
M5M51008P-12LL-I	MITSUBISHI	获取价格	Standard SRAM, 128KX8, 120ns, CMOS, PDIP32

与M5M51008KV-70H相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

5
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

2
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

23
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

24

产品中心

服务支持

精选活动

关于我们

帮助中心

M5M51008KV-70H

M5M51008KV-70H 数据手册

与M5M51008KV-70H相关器件

与M5M51008KV-70H相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

M5M51008KV-70H

M5M51008KV-70H 数据手册

与M5M51008KV-70H相关器件

与M5M51008KV-70H相关文章

您还可以找

您在本页遇到什么问题？