Datasheet > M5M51008KV-10LL

M5M51008KV-10LL

更新时间： 2024-11-01 22:24:51

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
7页	64K
描述
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

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中文翻译

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数据手册

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M5M51008KV-10LL 数据手册

1997-3/25

MITSUBISHI LSIs

M5M51008BP,FP,VP,RV,KV,KR -55L,-70L,-10L,

-55LL,-70LL,-10LL

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION

PIN CONFIGURATION (TOP VIEW)

The M5M51008BP,FP,VP,RV,KV,KR are a 1048576-bit CMOS

static RAM organized as 131072 word by 8-bit which are

fabricated using high-performance triple polysilicon CMOS

technology. The use of resistive load NMOS cells and CMOS

periphery result in a high density and low power static RAM.

They are low standby current and low operation current and ideal

for the battery back-up application.

The M5M51008BVP,RV,KV,KR are packaged in a 32-pin thin

small outline package which is a high reliability and high density

surface mount device(SMD).Two types of devices are available.

VP,KV(normal lead bend type package),RV,KR(reverse lead bend

type package). Using both types of devices, it becomes very easy

to design a printed circuit board.

A16

A14

A12

VCC

A15

ADDRESS

INPUT

CHIP SELECT

INPUT

WRITE CONTROL

INPUT

A13

ADDRESS

INPUTS

ADDRESS

INPUTS

A11

A10

OUTPUT ENABLE

INPUT

ADDRESS

INPUT

CHIP SELECT

INPUT

DQ8

DQ7

DQ6

DQ5

DQ4

FEATURES

DQ1

Power supply current

DATA

INPUTS/

OUTPUTS

DATA

INPUTS/

OUTPUTS

Access time

(max)

DQ2 14

Active

(1MHz)

(max)

Type name

stand-by

(max)

DQ3

GND

M5M51008BP,FP,VP,RV,KV,KR-55L

M5M51008BP,FP,VP,RV,KV,KR-70L

M5M51008BP,FP,VP,RV,KV,KR-10L

M5M51008BP,FP,VP,RV,KV,KR-55LL

M5M51008BP,FP,VP,RV,KV,KR-70LL

M5M51008BP,FP,VP,RV,KV,KR-10LL

55ns

70ns

100µA

15mA

Outline 32P4(P), 32P2M-A(FP)

(Vcc=5.5V)

100ns

55ns

20µA

(Vcc=5.5V)

A11

A10

70ns

0.3µA

(Vcc=3.0V,typ)

100ns

A13

DQ8

DQ7

DQ6

DQ5

DQ4

GND

DQ3

DQ2

DQ1

Single +5V power supply

Low stand-by current 0.3µA (typ.)

Directly TTL compatible : All inputs and outputs

Easy memory expansion and power down by S1,S2

Data hold on +2V power supply

Three-state outputs : OR - tie capability

OE prevents data contention in the I/O bus

Common data I/O

A15

VCC

M5M51008BVP,KV

A16

A14

Package

A12

M5M51008BP

M5M51008BFP

M5M51008BVP,RV ···········3·2pin 8 X 20 mm²TSOP

M5M51008BKV,KR ···········3· 2pin 8 X 13.4 mm²TSOP

···········3· 2pin 600mil DIP

···········3· 2pin 525mil SOP

APPLICATION

Small capacity memory units

Outline 32P3H-E(VP), 32P3K-B(KV)

A12 12

A14 11

DQ1

DQ2

DQ3

GND

DQ4

DQ5

DQ6

DQ7

DQ8

A16

VCC

A15

M5M51008BRV,KR

A13

A10

A11

Outline 32P3H-F(RV), 32P3K-C(KR)

NC : NO CONNECTION

MITSUBISHI

ELECTRIC

12 3 4 5 6 7

中文翻译

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与M5M51008KV-10LL相关器件

型号	品牌	获取价格	描述	数据表
M5M51008KV-55H	MITSUBISHI	获取价格	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
M5M51008KV-55L	MITSUBISHI	获取价格	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
M5M51008KV-55LL	MITSUBISHI	获取价格	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
M5M51008KV-55X	MITSUBISHI	获取价格	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
M5M51008KV-70H	MITSUBISHI	获取价格	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
M5M51008KV-70L	MITSUBISHI	获取价格	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
M5M51008KV-70LL	MITSUBISHI	获取价格	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
M5M51008KV-70X	MITSUBISHI	获取价格	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
M5M51008P-10LL-I	MITSUBISHI	获取价格	Standard SRAM, 128KX8, 100ns, CMOS, PDIP32
M5M51008P-10LL-W	MITSUBISHI	获取价格	Standard SRAM, 128KX8, 100ns, CMOS, PDIP32, DIP-32

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