是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | SOJ |
包装说明: | SOJ, SOJ28,.44 | 针数: | 28 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.02 | 风险等级: | 5.37 |
访问模式: | FAST PAGE WITH EDO | 最长访问时间: | 70 ns |
其他特性: | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | I/O 类型: | COMMON |
JESD-30 代码: | R-PDSO-J28 | JESD-609代码: | e0 |
长度: | 18.41 mm | 内存密度: | 16777216 bit |
内存集成电路类型: | EDO DRAM | 内存宽度: | 8 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 28 | 字数: | 2097152 words |
字数代码: | 2000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 2MX8 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | SOJ |
封装等效代码: | SOJ28,.44 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 3.3 V | 认证状态: | Not Qualified |
刷新周期: | 2048 | 座面最大高度: | 3.55 mm |
自我刷新: | NO | 最大待机电流: | 0.0005 A |
子类别: | DRAMs | 最大压摆率: | 0.105 mA |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 3 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | J BEND |
端子节距: | 1.27 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 10.16 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M5M4V17805CTP-5ST | MITSUBISHI |
获取价格 |
EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.400 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-28 | |
M5M4V17805CTP-5T | MITSUBISHI |
获取价格 |
EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.400 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-28 | |
M5M4V17805CTP-6 | MITSUBISHI |
获取价格 |
EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.400 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-28 | |
M5M4V17805CTP-6S | MITSUBISHI |
获取价格 |
EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.400 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-28 | |
M5M4V17805CTP-6ST | MITSUBISHI |
获取价格 |
EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.400 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-28 | |
M5M4V17805CTP-7 | MITSUBISHI |
获取价格 |
EDO DRAM, 2MX8, 70ns, CMOS, PDSO28, 0.400 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-28 | |
M5M4V18160BJ-6ST | MITSUBISHI |
获取价格 |
Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 | |
M5M4V18160BJ-6T | MITSUBISHI |
获取价格 |
Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 | |
M5M4V18160BJ-8T | MITSUBISHI |
获取价格 |
Fast Page DRAM, 1MX16, 80ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 | |
M5M4V18160BRT-6T | MITSUBISHI |
获取价格 |
Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44 |