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M59DR016D100ZB6 PDF预览

M59DR016D100ZB6

更新时间: 2024-11-13 20:33:35
品牌 Logo 应用领域
恒忆 - NUMONYX 可编程只读存储器内存集成电路闪存
页数 文件大小 规格书
37页 240K
描述
1MX16 FLASH 1.8V PROM, 100ns, PBGA48, 0.75 MM PITCH, TFBGA-48

M59DR016D100ZB6 数据手册

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M59DR016C  
M59DR016D  
16 Mbit (1Mb x16, Dual Bank, Page)  
1.8V Supply Flash Memory  
PRODUCT PREVIEW  
SUPPLY VOLTAGE  
– V = V = 1.65V to 2.2V for Program,  
DD  
DDQ  
Erase and Read  
– V = 12V for fast Program (optional)  
PP  
ASYNCHRONOUS PAGE MODE READ  
– Page Width: 4 words  
BGA  
– Page Access: 35ns  
– Random Access: 100ns  
TFBGA48 (ZB)  
8 x 6 balls array  
PROGRAMMING TIME  
– 10µs by Word typical  
– Double Word Programming Option  
MEMORY BLOCKS  
– Dual Bank Memory Array: 4 Mbit - 12 Mbit  
– Parameter Blocks (Top or Bottom location)  
Figure 1. Logic Diagram  
DUAL BANK OPERATIONS  
– Read within one Bank while Program or  
Erase within the other  
– No delay between Read and Write operations  
BLOCK PROTECTION/UNPROTECTION  
– All Blocks protected at Power Up  
V
V
V
DD DDQ PP  
20  
16  
– Any combination of Blocks can be protected  
COMMON FLASH INTERFACE (CFI)  
64 bit SECURITY CODE  
A0-A19  
DQ0-DQ15  
W
E
ERASE SUSPEND and RESUME MODES  
M59DR016C  
M59DR016D  
100,000 PROGRAM/ERASE CYCLES per  
G
BLOCK  
RP  
WP  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Top Device Code, M59DR016C: 2293h  
– Bottom Device Code, M59DR016D: 2294h  
V
SS  
AI04106  
March 2001  
1/37  
This is preliminary information on a new product now in development. Details are subject to change without notice.  

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