Datasheet > M59DR016D100ZB6

M59DR016D100ZB6

更新时间： 2024-11-13 20:33:35

品牌	Logo	应用领域
恒忆 - NUMONYX		可编程只读存储器内存集成电路闪存
页数	文件大小	规格书
37页	240K
描述
1MX16 FLASH 1.8V PROM, 100ns, PBGA48, 0.75 MM PITCH, TFBGA-48

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M59DR016D100ZB6 数据手册

M59DR016C

M59DR016D

16 Mbit (1Mb x16, Dual Bank, Page)

1.8V Supply Flash Memory

PRODUCT PREVIEW

■ SUPPLY VOLTAGE

– V = V = 1.65V to 2.2V for Program,

DDQ

Erase and Read

– V = 12V for fast Program (optional)

■ ASYNCHRONOUS PAGE MODE READ

– Page Width: 4 words

BGA

– Page Access: 35ns

– Random Access: 100ns

TFBGA48 (ZB)

8 x 6 balls array

■ PROGRAMMING TIME

– 10µs by Word typical

– Double Word Programming Option

■ MEMORY BLOCKS

– Dual Bank Memory Array: 4 Mbit - 12 Mbit

– Parameter Blocks (Top or Bottom location)

Figure 1. Logic Diagram

■ DUAL BANK OPERATIONS

– Read within one Bank while Program or

Erase within the other

– No delay between Read and Write operations

■ BLOCK PROTECTION/UNPROTECTION

– All Blocks protected at Power Up

DD DDQ PP

– Any combination of Blocks can be protected

■ COMMON FLASH INTERFACE (CFI)

■ 64 bit SECURITY CODE

A0-A19

DQ0-DQ15

■ ERASE SUSPEND and RESUME MODES

M59DR016C

M59DR016D

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M59DR016C: 2293h

– Bottom Device Code, M59DR016D: 2294h

AI04106

March 2001

1/37

This is preliminary information on a new product now in development. Details are subject to change without notice.

12 3 4 5 6 7...37

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与M59DR016D100ZB6相关器件

型号	品牌	获取价格	描述	数据表
M59DR016D100ZB6T	STMICROELECTRONICS	获取价格	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
M59DR016D100ZB6T	NUMONYX	获取价格	Flash, 1MX16, 100ns, PBGA48, 0.75 MM PITCH, TFBGA-48
M59DR016D120ZB1	STMICROELECTRONICS	获取价格	1MX16 FLASH 1.8V PROM, 120ns, PBGA48, 0.75 MM PITCH, TFBGA-48
M59DR016D120ZB1	NUMONYX	获取价格	Flash, 1MX16, 120ns, PBGA48, 0.75 MM PITCH, TFBGA-48
M59DR016D120ZB1T	STMICROELECTRONICS	获取价格	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
M59DR016D120ZB1T	NUMONYX	获取价格	Flash, 1MX16, 120ns, PBGA48, 0.75 MM PITCH, TFBGA-48
M59DR016D120ZB6	NUMONYX	获取价格	1MX16 FLASH 1.8V PROM, 120ns, PBGA48, 0.75 MM PITCH, TFBGA-48
M59DR016D120ZB6T	STMICROELECTRONICS	获取价格	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
M59DR016D120ZB6T	NUMONYX	获取价格	Flash, 1MX16, 120ns, PBGA48, 0.75 MM PITCH, TFBGA-48
M59DR016DZB	STMICROELECTRONICS	获取价格	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory