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M59DR016D100ZB6T PDF预览

M59DR016D100ZB6T

更新时间: 2024-11-13 20:33:35
品牌 Logo 应用领域
恒忆 - NUMONYX /
页数 文件大小 规格书
37页 240K
描述
Flash, 1MX16, 100ns, PBGA48, 0.75 MM PITCH, TFBGA-48

M59DR016D100ZB6T 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:0.75 MM PITCH, TFBGA-48针数:48
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.4
最长访问时间:100 ns启动块:BOTTOM
JESD-30 代码:R-PBGA-B48长度:12 mm
内存密度:16777216 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
端子数量:48字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1MX16封装主体材料:PLASTIC/EPOXY
封装代码:LFBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH并行/串行:PARALLEL
编程电压:1.8 V认证状态:Not Qualified
座面最大高度:1.35 mm最大供电电压 (Vsup):2.2 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
类型:NOR TYPE宽度:7 mm
Base Number Matches:1

M59DR016D100ZB6T 数据手册

 浏览型号M59DR016D100ZB6T的Datasheet PDF文件第2页浏览型号M59DR016D100ZB6T的Datasheet PDF文件第3页浏览型号M59DR016D100ZB6T的Datasheet PDF文件第4页浏览型号M59DR016D100ZB6T的Datasheet PDF文件第5页浏览型号M59DR016D100ZB6T的Datasheet PDF文件第6页浏览型号M59DR016D100ZB6T的Datasheet PDF文件第7页 
M59DR016C  
M59DR016D  
16 Mbit (1Mb x16, Dual Bank, Page)  
1.8V Supply Flash Memory  
PRODUCT PREVIEW  
SUPPLY VOLTAGE  
– V = V = 1.65V to 2.2V for Program,  
DD  
DDQ  
Erase and Read  
– V = 12V for fast Program (optional)  
PP  
ASYNCHRONOUS PAGE MODE READ  
– Page Width: 4 words  
BGA  
– Page Access: 35ns  
– Random Access: 100ns  
TFBGA48 (ZB)  
8 x 6 balls array  
PROGRAMMING TIME  
– 10µs by Word typical  
– Double Word Programming Option  
MEMORY BLOCKS  
– Dual Bank Memory Array: 4 Mbit - 12 Mbit  
– Parameter Blocks (Top or Bottom location)  
Figure 1. Logic Diagram  
DUAL BANK OPERATIONS  
– Read within one Bank while Program or  
Erase within the other  
– No delay between Read and Write operations  
BLOCK PROTECTION/UNPROTECTION  
– All Blocks protected at Power Up  
V
V
V
DD DDQ PP  
20  
16  
– Any combination of Blocks can be protected  
COMMON FLASH INTERFACE (CFI)  
64 bit SECURITY CODE  
A0-A19  
DQ0-DQ15  
W
E
ERASE SUSPEND and RESUME MODES  
M59DR016C  
M59DR016D  
100,000 PROGRAM/ERASE CYCLES per  
G
BLOCK  
RP  
WP  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Top Device Code, M59DR016C: 2293h  
– Bottom Device Code, M59DR016D: 2294h  
V
SS  
AI04106  
March 2001  
1/37  
This is preliminary information on a new product now in development. Details are subject to change without notice.  

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