M59DR016D120ZB6T

更新时间： 2024-09-24 22:46:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		内存集成电路
页数	文件大小	规格书
37页	241K
描述
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

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M59DR016D120ZB6T 数据手册

M59DR016C

M59DR016D

16 Mbit (1Mb x16, Dual Bank, Page)

1.8V Supply Flash Memory

PRODUCT PREVIEW

■ SUPPLY VOLTAGE

– V = V = 1.65V to 2.2V for Program,

DDQ

Erase and Read

– V = 12V for fast Program (optional)

■ ASYNCHRONOUS PAGE MODE READ

– Page Width: 4 words

BGA

– Page Access: 35ns

– Random Access: 100ns

TFBGA48 (ZB)

8 x 6 balls array

■ PROGRAMMING TIME

– 10µs by Word typical

– Double Word Programming Option

■ MEMORY BLOCKS

– Dual Bank Memory Array: 4 Mbit - 12 Mbit

– Parameter Blocks (Top or Bottom location)

Figure 1. Logic Diagram

■ DUAL BANK OPERATIONS

– Read within one Bank while Program or

Erase within the other

– No delay between Read and Write operations

■ BLOCK PROTECTION/UNPROTECTION

– All Blocks protected at Power Up

DD DDQ PP

– Any combination of Blocks can be protected

■ COMMON FLASH INTERFACE (CFI)

■ 64 bit SECURITY CODE

A0-A19

DQ0-DQ15

■ ERASE SUSPEND and RESUME MODES

M59DR016C

M59DR016D

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M59DR016C: 2293h

– Bottom Device Code, M59DR016D: 2294h

AI04106

March 2001

1/37

This is preliminary information on a new product now in development. Details are subject to change without notice.

12 3 4 5 6 7...37

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与M59DR016D120ZB6T相关器件

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M59DR032A100N6T	STMICROELECTRONICS	获取价格	32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
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