Datasheet > M59BW102

M59BW102

更新时间： 2024-09-24 22:25:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存
页数	文件大小	规格书
24页	182K
描述
1 Mbit 64Kb x16, Burst Low Voltage Flash Memory

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数据手册

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M59BW102 数据手册

M59BW102

1 Mbit (64Kb x16, Burst) Low Voltage Flash Memory

PRELIMINARY DATA

■ 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM,

ERASE and READ OPERATIONS

■ SEQUENTIAL CYCLE TIME: 25ns

■ RANDOM ACCESS TIME

■ PROGRAMMING TIME: 10µs typical

■ INTERLEAVED ACCESS TIME: 16ns

■ CONTINUOUS MEMORY INTERLEAVING

– Unlimited Linear Access Data Output

■ PROGRAM/ERASE CONTROLLER (P/E.C.)

TSOP40 (N)

10 x 14mm

– Program Word-by-Word

– Status Register bits

■ LOW POWER CONSUMPTION

– Stand-by and Automatic Stand-by

■ 100,000 PROGRAM/ERASE CYCLES

■ 20 YEARS DATA RETENTION

Figure 1. Logic Diagram

– Defectivity below 1ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: C1h

DESCRIPTION

The M59BW102 is a non-volatile memory that may

be erased electrically at the chip level and pro-

grammed in-system on a Word-by-Word basis us-

ing only a single 3V V supply. For Program and

A0-A15

DQ0-DQ15

Erase operations the necessary high voltages are

generated internally. The device can also be pro-

grammed in standard programmers.

The device can be programmed and erased over

100,000 cycles.

Instructions for Read/Reset, Auto Select for read-

ing the Electronic Signature, Programming and

Chip Erase are written to the device in cycles of

commands to a Command Interface using stan-

dard microprocessor write timings. The

M59BW102 features an interleaved access mo-

dality which allows extremely fast access time.

The device is offered in TSOP40 (10 x 14mm)

package.

M59BW102

ALE

AI02763B

March 2000

1/24

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

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