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M59DR008F100N6 PDF预览

M59DR008F100N6

更新时间: 2024-11-13 13:00:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储
页数 文件大小 规格书
37页 268K
描述
512KX16 FLASH 1.8V PROM, 100ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

M59DR008F100N6 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:TSOP包装说明:12 X 20 MM, PLASTIC, TSOP-48
针数:48Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.29最长访问时间:100 ns
启动块:BOTTOM命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PDSO-G48JESD-609代码:e0
长度:18.4 mm内存密度:8388608 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:8,15
端子数量:48字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512KX16封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP48,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
页面大小:4 words并行/串行:PARALLEL
电源:1.8/2 V编程电压:1.8 V
认证状态:Not Qualified座面最大高度:1.2 mm
部门规模:4K,32K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.04 mA
最大供电电压 (Vsup):2.2 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
切换位:YES类型:NOR TYPE
宽度:12 mmBase Number Matches:1

M59DR008F100N6 数据手册

 浏览型号M59DR008F100N6的Datasheet PDF文件第2页浏览型号M59DR008F100N6的Datasheet PDF文件第3页浏览型号M59DR008F100N6的Datasheet PDF文件第4页浏览型号M59DR008F100N6的Datasheet PDF文件第5页浏览型号M59DR008F100N6的Datasheet PDF文件第6页浏览型号M59DR008F100N6的Datasheet PDF文件第7页 
M59DR008E  
M59DR008F  
8 Mbit (512Kb x16, Dual Bank, Page) Low Voltage Flash Memory  
PRODUCT PREVIEW  
SUPPLY VOLTAGE  
– V  
= V  
= 1.65V to 2.2V: for Program,  
DDQ  
DD  
Erase and Read  
– V  
= 12V: optional Supply Voltage for fast  
PP  
Program and Erase  
ASYNCHRONOUS PAGE MODE READ  
– Page Width: 4 words  
BGA  
– Page Access: 35ns  
– Random Access: 100ns  
TSOP48 (N)  
12 x 20mm  
FBGA48 (ZB)  
8 x 6 solder balls  
PROGRAMMING TIME  
– 10µs by Word typical  
– Double Word Programming Option  
MEMORY BLOCKS  
– Dual Bank Memory Array: 4 Mbit - 4 Mbit  
– Parameter Blocks (Top or Bottom location)  
– Main Blocks  
Figure 1. Logic Diagram  
DUAL BANK OPERATIONS  
– Read within one Bank while Program or  
Erase within the other  
V
V
V
DD DDQ PP  
– No delay between Read and Write operations  
BLOCK PROTECTION/UNPROTECTION  
– All Blocks protected at Power Up  
19  
16  
A0-A18  
DQ0-DQ15  
– Any combination of Blocks can be protected  
– WP for Block Locking  
W
E
M59DR008E  
M59DR008F  
COMMON FLASH INTERFACE (CFI)  
64 bit SECURITY CODE  
G
RP  
WP  
ERASE SUSPEND and RESUME MODES  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
20 YEARS DATA RETENTION  
– Defectivity below 1ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
V
SS  
AI03212  
– Device Code, M59DR008E: A2h  
– Device Code, M59DR008F: A3h  
October 1999  
1/37  
This is preliminary information on a new product now in development. Details are subject to change without notice.  

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