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M54585FP PDF预览

M54585FP

更新时间： 2024-11-19 22:46:39
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体二极管小信号双极晶体管达林顿晶体管开关光电二极管
页数 文件大小 规格书
4页 76K
描述
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

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中文翻译

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M54585FP 技术参数

是否无铅： 不含铅是否Rohs认证： 不符合
生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G20
针数：20Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.79
Is Samacsys：N最大集电极电流 (IC)：0.5 A
集电极-发射极最大电压：50 V配置：COMPLEX
最小直流电流增益 (hFE)：1000JESD-30 代码：R-PDSO-G20
JESD-609代码：e0元件数量：8
端子数量：20封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

M54585FP 数据手册

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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>  
M54585P/FP  
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE  
DESCRIPTION  
PIN CONFIGURATION  
M54585P and M54585FP are eight-circuit Darlington tran-  
sistor arrays with clamping diodes. The circuits are made of  
NPN transistors. Both the semiconductor integrated circuits  
perform high-current driving with extremely low input-current  
supply.  
IN1→  
IN2→  
IN3→  
IN4→  
IN5→  
IN6→  
IN7→  
IN8→  
GND  
1
2
3
4
5
6
7
8
9
18 →O1  
17 →O2  
16 →O3  
15 →O4  
14 →O5  
13 →O6  
12 →O7  
OUTPUT  
INPUT  
FEATURES  
Á High breakdown voltage (BVCEO ≥ 50V)  
Á High-current driving (Ic(max) = 500mA)  
Á With clamping diodes  
→O8  
11  
10  
→COM COMMON  
Package type 18P4G(P)  
Á Driving available with TTL output or with PMOS IC output  
Á Wide operating temperature range (Ta = –20 to +75°C)  
NC  
1
2
3
4
5
6
7
8
9
20 NC  
19 →O1  
18 →O2  
IN1→  
IN2→  
IN3→  
IN4→  
IN5→  
IN6→  
IN7→  
IN8→  
APPLICATION  
Drives of relays and printers, digit drives of indication ele-  
ments such as LEDs and lamps, and MOS-bipolar logic IC  
interfaces  
→O3  
17  
16 →O4  
15 →O5  
INPUT  
OUTPUT  
14  
→O6  
13 →O7  
FUNCTION  
→O8  
12  
11  
The M54585P and M54585FP each have eight circuits,  
which are NPN Darlington transistors. Input transistors have  
resistance of 2.7kΩ between the base and input pin. A spike-  
killer clamping diode is provided between each output pin  
and GND. Output transistor emitters are all connected to the  
GND pin.  
→COM  
GND 10  
COMMON  
Package type 20P2N-A(FP)  
NC : No connection  
CIRCUIT DIAGRAM  
Collector current is 500mA maximum. The maximum collec-  
tor-emitter voltage is 50V.  
COM  
The M54585FP is enclosed in a molded small flat package,  
enabling space-saving design.  
OUTPUT  
2.7K  
INPUT  
7.2K  
3K  
GND  
The eight circuits share the COM and GND.  
The diode, indicated with the dotted line, is parasitic, and cannot  
be used.  
Unit : Ω  
Aug. 1999  
1234

中文翻译

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M54586P MITSUBISHI

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M54587 MITSUBISHI

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 		8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
M54587FP MITSUBISHI

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 		8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
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 		8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
M54590P MITSUBISHI

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