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M54585WP

更新时间： 2024-11-24 12:23:11
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体二极管晶体管达林顿晶体管
页数 文件大小 规格书
5页 230K
描述
8-Unit 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

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M54585WP 数据手册

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MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY>  
M54585WP  
8-Unit 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE  
DESCRIPTION  
PIN CONFIGURATION  
M54585WP is eight-circuit Darlington transistor arrays with  
clamping diodes. The circuits are made of NPN transistors.  
Both the semiconductor integrated circuits perform high-  
current driving with extremely low input-current supply.  
18 →O1  
17 →O2  
16 →O3  
IN1→  
IN2→  
IN3→  
IN4→  
IN5→  
IN6→  
IN7→  
IN8→  
GND  
1
2
3
4
5
6
7
8
9
FEATURES  
15  
14  
13  
12  
11  
10  
→O4  
→O5  
→O6  
→O7  
→O8  
● High breakdown voltage (BVCEO > 50V)  
● High-current driving (IC(max) = 500mA)  
● With clamping diodes  
● Driving available with TTL output or with PMOS IC  
output  
INPUT  
OUTPUT  
→COM COMMON  
APPLICATIONS  
Drives of relays and printers, digit drives of indication  
elements such as LEDs and lamps, and MOS-bipolar logic  
IC interfaces  
Package type 18P4X  
CIRCUIT DIAGRAM  
FUNCTION  
The M54585 is each have eight circuits, which are NPN  
Darlington transistors. Input transistors have resistance of  
2.7kΩbetween the base and input pin. A spikekiller  
clamping diode is provided between each output pin and  
GND. Output transistor emitters are all connected to the  
GND pin.  
COM  
OUTPUT  
2.7K  
INPUT  
Collector current is 500mA maximum. The maximum  
collector-emitter voltage is 50V.  
7.2K  
3K  
GND  
The eight circuits share the COM and GND.  
The diode, indicated with the dotted line, is parasitic, and  
cannot be used.  
Unit:Ω  
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75℃)  
Symbol  
VCEO  
IC  
Parameter  
Collector-emitter voltage  
Collector current  
Conditions  
Ratings  
– 0.5 ～ + 50  
500  
– 0.5 ～ +30  
500  
Unit  
V
mA  
V
mA  
V
W
Output , H  
Current per circuit output, L  
VI  
Input voltage  
Clamping diode forward current  
Clamping diode reverse voltage  
Power dissipation  
IF  
50  
1.79  
VR  
Pd  
Ta = 25℃, when mounted on board  
Topr  
Tstg  
Operating temperature  
Storage temperature  
– 20 ～ + 75  
– 55 ～ + 125  
℃
℃
Aug-2011  
12345

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