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M54587P PDF预览

M54587P

更新时间： 2024-11-19 22:46:39
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体外围驱动器驱动程序和接口二极管接口集成电路晶体管达林顿晶体管光电二极管
页数 文件大小 规格书
5页 46K
描述
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

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中文翻译

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M54587P 技术参数

是否无铅： 不含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：DIP
包装说明：DIP, DIP20,.3针数：20
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.82
Is Samacsys：N内置保护：TRANSIENT
驱动器位数：8接口集成电路类型：BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码：R-PDIP-T20JESD-609代码：e0
功能数量：8端子数量：20
最高工作温度：75 °C最低工作温度：-20 °C
输出电流流向：SINK最大输出电流：0.4 A
标称输出峰值电流：0.4 A封装主体材料：PLASTIC/EPOXY
封装代码：DIP封装等效代码：DIP20,.3
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：NOT SPECIFIED电源：5 V
认证状态：Not Qualified子类别：Peripheral Drivers
最大供电电压：8 V最小供电电压：4 V
标称供电电压：5 V表面贴装：NO
技术：BIPOLAR温度等级：COMMERCIAL EXTENDED
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子节距：2.54 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

M54587P 数据手册

 浏览型号M54587P的Datasheet PDF文件第2页浏览型号M54587P的Datasheet PDF文件第3页浏览型号M54587P的Datasheet PDF文件第4页浏览型号M54587P的Datasheet PDF文件第5页 
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>  
M54587P/FP  
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE  
DESCRIPTION  
PIN CONFIGURATION  
M54587P and M54587FP are eight-circuit collector-current-  
synchronized Darlington transistor arrays. The circuits are  
made of PNP and NPN transistors. Both the semiconductor  
integrated circuits perform high-current driving with ex-  
tremely low input-current supply.  
1
2
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
NC  
COM COMMON  
IN1  
IN2  
IN3  
IN4  
IN5  
IN6  
IN7  
IN8  
GND  
O1  
O2  
O3  
3
4
5
O4  
INPUT  
OUTPUT  
O5  
6
FEATURES  
7
O6  
O7  
O8  
ꢀ
High breakdown voltage (BVCEO ≥ 50V)  
8
ꢀ
High-current driving (IC(max) = 500mA)  
9
ꢀ
“L” active level input  
10  
VCC  
ꢀ
With input diode  
ꢀ
With clamping diodes  
NC : No connection  
20P4(P)  
Package type 20P2N-A(FP)  
ꢀ
Wide operating temperature range (Ta = –20 to +75°C)  
CIRCUIT DIAGRAM (EACH CIRCUIT)  
APPLICATION  
Interfaces between microcomputers and high-voltage, high-  
current drive systems, drives of relays and MOS-bipolar logic  
IC interfaces  
V
CC  
7K  
COM  
INPUT  
OUTPUT  
7K  
2.7K  
7.2K  
3K  
FUNCTION  
GND  
The M54587 is produced by adding PNP transistors to  
M54585 inputs. Eight circuits having active L-level inputs are  
provided.  
The eight circuits share the Vcc, COM and GND  
The diode, indicated with the dotted line, is parasitic, and  
cannot be used.  
Resistance of 7kΩ and diode are provided in series between  
each input and PNP transistor base. The input diode is in-  
tended to prevent the flow of current from the input to the  
VCC. Without this diode, the current flow from “H” input to the  
VCC and the “L” input circuits is activated, in such case where  
one of the inputs of the 8 circuits is “H” and the others are “L”  
to save power consumption. The diode is inserted to prevent  
such misoperation.  
Unit : Ω  
This device is most suitable for a driver using NMOS IC out-  
put especially for the driver of current sink.  
Collector current is 500mA maximum. Collector-emitter sup-  
ply voltage is 50V.  
The M54587FP is enclosed in a molded small flat package,  
enabling space saving design.  
Mar.2002  
12345

中文翻译

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 		Buffer/Inverter Based Peripheral Driver, 0.018A, BIPolar, PDIP14, PLASTIC, DIP-14
M54601P MITSUBISHI

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 		And Gate Based Peripheral Driver, 0.3A, BIPolar, PDIP8, PLASTIC, DIP-8
M54602P MITSUBISHI

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