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M54585KP

更新时间： 2024-11-20 04:18:23
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体二极管晶体管达林顿晶体管
页数 文件大小 规格书
4页 70K
描述
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

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中文翻译

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M54585KP 技术参数

是否无铅： 不含铅是否Rohs认证： 不符合
生命周期：Lifetime Buy包装说明：SMALL OUTLINE, R-PDSO-G20
针数：20Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.85
最大集电极电流 (IC)：0.5 A集电极-发射极最大电压：50 V
配置：COMPLEX最小直流电流增益 (hFE)：1000
JESD-30 代码：R-PDSO-G20JESD-609代码：e0
元件数量：8端子数量：20
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

M54585KP 数据手册

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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>  
M54585KP  
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE  
DESCRIPTION  
PIN CONFIGURATION  
M54585KP is eight-circuit Darlington transistor arrays with  
clamping diodes. The circuits are made of NPN transistors.  
Both the semiconductor integrated circuits perform high-cur-  
rent driving with extremely low input-current supply.  
NC  
1
2
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
NC  
O1  
O2  
O3  
O4  
O5  
O6  
O7  
→
→
→
→
→
→
→
IN1→  
→
IN2  
3
IN3→  
4
→
5
IN4  
INPUT  
OUTPUT  
IN5→  
6
→
IN6  
7
FEATURES  
● High breakdown voltage (BVCEO ≥ 50V)  
IN7→  
8
→
→
9
IN8  
O8  
●
High-current driving (IC(max) = 500mA)  
10  
● With clamping diodes  
GND  
→COM COMMON  
●
Driving available with TTL output or with PMOS IC output  
NC : No connection  
●
Package type 20P2E-A  
With shrink small outline package  
CIRCUIT DIAGRAM  
COM  
OUTPUT  
APPLICATION  
Drives of relays and printers, digit drives of indication ele-  
ments such as LEDs and lamps, and MOS-bipolar logic IC  
interfaces  
2.7k  
INPUT  
7.2k  
3k  
GND  
The eight circuits share the COM and GND.  
FUNCTION  
The M54585KP has eight circuits, which are NPN Darlington  
transistors. Input transistors have resistance of 2.7kΩ be-  
tween the base and input pin. A spike-killer clamping diode  
is provided between each output pin and GND. Output tran-  
sistor emitters are all connected to the GND pin.  
Collector current is 500mA maximum. The maximum collec-  
tor-emitter voltage is 50V.  
The diode, indicated with the dotted line, is parasitic, and cannot  
be used.  
Unit : Ω  
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)  
Symbol  
VCEO  
IC  
Parameter  
Collector-emitter voltage  
Collector current  
Conditions  
Ratings  
–0.5 ~ +50  
500  
Unit  
V
Output, H  
mA  
V
Current per circuit output, L  
–0.5 ~ +30  
500  
VI  
Input voltage  
mA  
V
IF  
Clamping diode forward current  
Clamping diode reverse voltage  
Power dissipation  
50  
VR  
0.68  
Pd  
Ta = 25°C, when mounted on board  
W
°C  
°C  
–20 ~ +75  
–55 ~ +125  
Topr  
Tstg  
Operating temperature  
Storage temperature  
Jan. 2000  
1234

中文翻译

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