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M390S6450CT1-C7A PDF预览

M390S6450CT1-C7A

更新时间: 2024-02-14 07:14:08
品牌 Logo 应用领域
三星 - SAMSUNG 光电二极管动态存储器
页数 文件大小 规格书
12页 222K
描述
64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD

M390S6450CT1-C7A 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIMM包装说明:DIMM, DIMM168
针数:168Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.36
风险等级:5.92Is Samacsys:N
访问模式:SINGLE BANK PAGE BURST最长访问时间:5.4 ns
其他特性:AUTO/SELF REFRESH最大时钟频率 (fCLK):133 MHz
I/O 类型:COMMONJESD-30 代码:R-XDMA-N168
内存密度:4831838208 bit内存集成电路类型:SYNCHRONOUS DRAM MODULE
内存宽度:72湿度敏感等级:1
功能数量:1端口数量:1
端子数量:168字数:67108864 words
字数代码:64000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:64MX72输出特性:3-STATE
封装主体材料:UNSPECIFIED封装代码:DIMM
封装等效代码:DIMM168封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY峰值回流温度(摄氏度):225
电源:3.3 V认证状态:Not Qualified
刷新周期:8192自我刷新:YES
最大待机电流:0.038 A子类别:DRAMs
最大压摆率:2.75 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子形式:NO LEAD
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

M390S6450CT1-C7A 数据手册

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M390S6450CT1  
PC133 Registered DIMM  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Voltage on any pin relative to Vss  
Voltage on VDD supply relative to Vss  
Storage temperature  
Symbol  
VIN, VOUT  
VDD, VDDQ  
TSTG  
Value  
-1.0 ~ 4.6  
-1.0 ~ 4.6  
-55 ~ +150  
18  
Unit  
V
V
°C  
W
Power dissipation  
PD  
Short circuit current  
IOS  
50  
mA  
Note :  
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.  
Functional operation should be restricted to recommended operating condition.  
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.  
DC OPERATING CONDITIONS AND CHARACTERISTICS  
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C)  
Parameter  
Supply voltage  
Symbol  
VDD  
VIH  
Min  
3.0  
2.0  
-0.3  
2.4  
-
Typ  
Max  
Unit  
V
Note  
3.3  
3.6  
Input high voltage  
Input low voltage  
3.0  
VDDQ+0.3  
V
1
VIL  
0
-
0.8  
-
V
2
Output high voltage  
Output low voltage  
Input leakage current  
VOH  
VOL  
ILI  
V
IOH = -2mA  
IOL = 2mA  
3
-
0.4  
10  
V
-10  
-
uA  
Notes :  
1. VIH (max) = 5.6V AC. The overshoot voltage duration is £ 3ns.  
2. VIL (min) = -2.0V AC. The undershoot voltage duration is £ 3ns.  
3. Any input 0V £ VIN £ VDDQ.  
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.  
CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV)  
Parameter  
Symbol  
Min  
Max  
Unit  
Input capacitance (A0 ~ A12)  
CIN1  
CIN2  
-
-
-
-
-
-
-
-
-
15  
15  
15  
20  
15  
15  
15  
16  
16  
pF  
pF  
pF  
pF  
pF  
pF  
pF  
pF  
pF  
Input capacitance (RAS, CAS, WE)  
Input capacitance (CKE0)  
CIN3  
Input capacitance (CLK0)  
CIN4  
Input capacitance (CS0, CS2)  
CIN5  
Input capacitance (DQM0 ~ DQM7)  
Input capacitance (BA0 ~ BA1)  
Data input/output capacitance (DQ0 ~ DQ63)  
Data input/output capacitance (CB0 ~ CB7)  
CIN6  
CIN7  
COUT  
COUT1  
Rev. 0.2 Sept. 2001  

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