Datasheet > M374S6453AT0-C80

M374S6453AT0-C80

更新时间： 2024-11-13 06:08:43

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
9页	144K
描述
Synchronous DRAM Module, 64MX72, 6ns, CMOS, DIMM-168

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M374S6453AT0-C80 数据手册

M374S6453AT0

PC100 Unbuffered DIMM

M374S6453AT0 SDRAM DIMM

64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD

GENERAL DESCRIPTION

FEATURE

The Samsung M374S6453AT0 is a 64M bit x 72 Synchronous

Dynamic RAM high density memory module. The Samsung

M374S6453AT0 consists of eighteen CMOS 32M x 8 bit with

4banks Synchronous DRAMs in TSOP-II 400mil package and a

2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy

substrate. Two 0.1uF decoupling capacitors are mounted on the

printed circuit board in parallel for each SDRAM.

• Performance range

Part No.

Max Freq. (Speed)

125MHz (8ns @ CL=3)

100MHz (10ns @ CL=2)

100MHz (10ns @ CL=3)

M374S6453AT0-C80

M374S6453AT0-C1H

M374S6453AT0-C1L

• Burst mode operation

• Auto & self refresh capability (8192 Cycles/64ms)

• LVTTL compatible inputs and outputs

• Single 3.3V ± 0.3V power supply

The M374S6453AT0 is a Dual In-line Memory Module and is

intended for mounting into 168-pin edge connector sockets.

Synchronous design allows precise cycle control with the use of

system clock. I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable latencies allows

the same device to be useful for a variety of high bandwidth, high

performance memory system applications.

• MRS cycle with address key programs

Latency (Access from column address)

Burst length (1, 2, 4, 8 & Full page)

Data scramble (Sequential & Interleave)

• All inputs are sampled at the positive going edge of the

system clock

• Serial presence detect with EEPROM

• PCB : Height (1,375mil), double sided component

PIN CONFIGURATIONS (Front side/back side)

PIN NAMES

Pin Front Pin Front Pin Front Pin Back Pin Back Pin Back

Pin Name

A0 ~ A12

Function

Address input (Multiplexed)

Select bank

VSS

29 DQM1 57 DQ18 85

VSS 113 DQM5 141 DQ50

BA0 ~ BA1

DQ0 ~ DQ63

CB0 ~ 7

DQ0 30

DQ1 31

DQ2 32

DQ3 33

CS0

VSS

DQ19 86 DQ32 114 CS1 142 DQ51

Data input/output

VDD

87 DQ33 115 RAS 143 VDD

DQ20 88 DQ34 116 VSS 144 DQ52

Check bit (Data-in/data-out)

*VREF 90

89 DQ35 117

VDD 118

145 NC

146 *VREF

147 NC

148 VSS

149 DQ53

CLK0 ~ CLK3 Clock input

VDD

CKE0 ~ CKE1 Clock enable input

DQ4 35

DQ5 36

DQ6 37

63 CKE1 91 DQ36 119

65 DQ21 93 DQ38 121

VSS

92 DQ37 120

CS0 ~ CS3

RAS

Chip select input

Row address strobe

Column address strobe

Write enable

10 DQ7 38 A10/AP

DQ22 94 DQ39 122 BA0 150 DQ54

67 DQ23 95 DQ40 123 A11 151 DQ55

69 DQ24 97 DQ41 125 CLK1 153 DQ56

71 DQ26 99 DQ43 127 VSS 155 DQ58

CAS

11 DQ8 39

12 40

13 DQ9 41

BA1

VDD

VSS

VSS 124 VDD 152 VSS

DQM0 ~ 7

VDD

DQM

14 DQ10 42 CLK0

DQ25 98 DQ42 126 A12 154 DQ57

Power supply (3.3V)

Ground

15 DQ11 43

16 DQ12 44

17 DQ13 45

VSS

CS2

VSS

DQ27 100 DQ44 128 CKE0 156 DQ59

VDD 101 DQ45 129 CS3 157 VDD

DQ28 102 VDD 130 DQM6 158 DQ60

*VREF

SDA

Power supply for reference

Serial data I/O

Serial clock

VDD

46 DQM2

19 DQ14 47 DQM3 75 DQ29 103 DQ46 131 DQM7 159 DQ61

SCL

77 DQ31 105 CB4 133 VDD 161 DQ63

79 CLK2 107 VSS 135 NC 163 CLK3

20 DQ15 48

VDD

DQ30 104 DQ47 132 *A13 160 DQ62

SA0 ~ 2

Address in EEPROM

Write protection

Don¢t use

21 CB0

22 CB1

VSS 106 CB5 134 NC 162 VSS

VSS

VDD

CB2

CB3

VSS

NC 108 NC 136 CB6 164 NC

WP 109 NC 137 CB7 165 **SA0

**SDA 110 VDD 138 VSS 166 **SA1

No connection

These pins are not used in this module.

** These pins should be NC in the system

55 DQ16 83 **SCL 111 CAS 139 DQ48 167 **SA2

28 DQM0 56 DQ17

VDD 112 DQM4 140 DQ49 168 VDD

which does not support SPD.

SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.

Rev. 0.0 Sep. 1999

12 3 4 5 6 7...9

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与M374S6453AT0-C80相关器件

型号	品牌	获取价格	描述	数据表
M374S6453BT0-C7A	SAMSUNG	获取价格	Synchronous DRAM Module, 64MX72, 5.4ns, CMOS, SODIMM-1684
M374S6453CTS	SAMSUNG	获取价格	M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM
M374S6453CTS-C1H	SAMSUNG	获取价格	Synchronous DRAM Module, 64MX72, 6ns, CMOS, DIMM-168
M374S6453CTS-C1L	SAMSUNG	获取价格	Synchronous DRAM Module, 64MX72, 6ns, CMOS, DIMM-168
M374S6453CTS-C7A	SAMSUNG	获取价格	Synchronous DRAM Module, 64MX72, 5.4ns, CMOS, DIMM-168
M374S6453CTS-C7C	SAMSUNG	获取价格	Synchronous DRAM Module, 64MX72, 5.4ns, CMOS, DIMM-168
M374S6453CTS-L1H	SAMSUNG	获取价格	Synchronous DRAM Module, 64MX72, 6ns, CMOS, DIMM-168
M374S6453CTS-L7A	SAMSUNG	获取价格	M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM
M374S6453CTS-L7C	SAMSUNG	获取价格	M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM
M374S6453DTS-C1H	SAMSUNG	获取价格	Synchronous DRAM Module, 64MX72, 6ns, CMOS, DIMM-168

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