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M34A02DW PDF预览

M34A02DW

更新时间: 2024-11-15 22:46:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
15页 126K
描述
2 Kbit Serial SMBus EEPROM for ACR Card Configuration

M34A02DW 数据手册

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M34A02  
2 Kbit Serial SMBus EEPROM for ACR Card Configuration  
PRODUCT PREVIEW  
Two Wire SMBus Serial Interface  
2.7V to 3.6V Single Supply Voltage  
Hardware Write Control  
8
BYTE and PAGE WRITE (up to 16 Bytes)  
RANDOM and SEQUENTIAL READ Modes  
1
Self-Timed Programming Cycle  
Automatic Address Incrementing  
Enhanced ESD/Latch-Up Behavior  
More than 1 Million Erase/Write Cycles  
More than 40 Year Data Retention  
SO8 (MN)  
150 mil width  
8
DESCRIPTION  
These electrically erasable programmable  
memory (EEPROM) devices are organized as  
256x8 bits, and operate down to 2.7 V.  
1
These devices are available in Plastic Small  
Outline and Thin Shrink Small Outline packages.  
TSSOP8 (DW)  
169 mil width  
These devices are written by the ACR card-issuer,  
and then accessed in Read mode in the  
application, using the ACR Serial Bus protocol.  
This is a two wire serial interface that uses a bi-  
directional data bus and serial clock. The device  
carries a built-in 4-bit Device Type Identifier code  
(1011).  
Figure 1. Logic Diagram  
The device behaves as a slave in the ACR Serial  
Bus protocol, with all memory operations  
synchronized by the serial clock. Read and Write  
operations are initiated by a Start condition,  
generated by the bus master. The Start condition  
V
CC  
3
E0-E2  
SCL  
WC  
SDA  
Table 1. Signal Names  
M34A02  
E0, E1, E2  
SDA  
Chip Enable  
Serial Data  
Serial Clock  
Write Control  
Supply Voltage  
Ground  
SCL  
WC  
V
SS  
AI03794  
V
V
CC  
SS  
April 2001  
1/15  
This is preliminary information on a new product now in development. Details are subject to change without notice.  

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