Datasheet > M34A08-VMN6T

M34A08-VMN6T

更新时间： 2024-09-27 22:46:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
15页	126K
描述
2 Kbit Serial SMBus EEPROM for ACR Card Configuration

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M34A08-VMN6T 数据手册

M34A02

2 Kbit Serial SMBus EEPROM for ACR Card Configuration

PRODUCT PREVIEW

■ Two Wire SMBus Serial Interface

■ 2.7V to 3.6V Single Supply Voltage

■ Hardware Write Control

■ BYTE and PAGE WRITE (up to 16 Bytes)

■ RANDOM and SEQUENTIAL READ Modes

■ Self-Timed Programming Cycle

■ Automatic Address Incrementing

■ Enhanced ESD/Latch-Up Behavior

■ More than 1 Million Erase/Write Cycles

■ More than 40 Year Data Retention

SO8 (MN)

150 mil width

DESCRIPTION

These electrically erasable programmable

memory (EEPROM) devices are organized as

256x8 bits, and operate down to 2.7 V.

These devices are available in Plastic Small

Outline and Thin Shrink Small Outline packages.

TSSOP8 (DW)

169 mil width

These devices are written by the ACR card-issuer,

and then accessed in Read mode in the

application, using the ACR Serial Bus protocol.

This is a two wire serial interface that uses a bi-

directional data bus and serial clock. The device

carries a built-in 4-bit Device Type Identifier code

(1011).

Figure 1. Logic Diagram

The device behaves as a slave in the ACR Serial

Bus protocol, with all memory operations

synchronized by the serial clock. Read and Write

operations are initiated by a Start condition,

generated by the bus master. The Start condition

E0-E2

SCL

SDA

Table 1. Signal Names

M34A02

E0, E1, E2

SDA

Chip Enable

Serial Data

Serial Clock

Write Control

Supply Voltage

Ground

SCL

AI03794

April 2001

1/15

This is preliminary information on a new product now in development. Details are subject to change without notice.

12 3 4 5 6 7...15

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