Datasheet > M29W800AB120N6T

M29W800AB120N6T

更新时间： 2024-11-30 22:26:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存内存集成电路光电二极管
页数	文件大小	规格书
33页	235K
描述
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

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M29W800AB120N6T 数据手册

M29W800AT

M29W800AB

8 Mbit (1Mb x8 or 512Kb x16, Boot Block)

Low Voltage Single Supply Flash Memory

■ 2.7V to 3.6V SUPPLY VOLTAGE for

PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 80ns

■ PROGRAMMING TIME: 10µs typical

■ PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Byte-by-Byte or Word-by-Word

– Status Register bits and Ready/Busy Output

■ SECURITY PROTECTION MEMORY AREA

■ INSTRUCTION ADDRESS CODING: 3 digits

■ MEMORY BLOCKS

TSOP48 (N)

12 x 20mm

SO44 (M)

FBGA

– Boot Block (Top or Bottom location)

– Parameter and Main blocks

LFBGA48 (ZA)

8 x 6 solder balls

■ BLOCK, MULTI-BLOCK and CHIP ERASE

■ MULTI BLOCK PROTECTION/TEMPORARY

UNPROTECTION MODES

Figure 1. Logic Diagram

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

■ LOW POWER CONSUMPTION

– Stand-by and Automatic Stand-by

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

A0-A18

DQ0-DQ14

■ 20 YEARS DATA RETENTION

– Defectivity below 1ppm/year

DQ15A–1

BYTE

■ ELECTRONIC SIGNATURE

M29W800AT

M29W800AB

– Manufacturer Code: 20h

– Top Device Code, M29W800AT: D7h

– Bottom Device Code, M29W800AB: 5Bh

AI02599

March 2000

1/33

12 3 4 5 6 7...33

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型号	品牌	获取价格	描述	数据表
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