Datasheet > M29W640FT60N6E

M29W640FT60N6E

更新时间： 2024-11-19 05:11:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存内存集成电路光电二极管
页数	文件大小	规格书
72页	476K
描述
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory

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数据手册

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M29W640FT60N6E 数据手册

M29W640FT

M29W640FB

64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block)

3V Supply Flash Memory

Figure 1. Packages

Features summary

Supply Voltage

– V_CC= 2.7V to 3.6V for Program, Erase,

Read

– V_PP=12 V for Fast Program (optional)

Asynchronous Random/Page Read

– Page Width: 4 Words

TSOP48 (N)

12 x 20mm

– Page Access: 25ns

– Random Access: 60ns, 70ns

Programming Time

FBGA

– 10 µs per Byte/Word typical

– 4 Words/8 Bytes Program

135 memory blocks

TFBGA48 (ZA)

6x8mm

– 1 Boot Block and 7 Parameter Blocks,

8 KBytes each (Top or Bottom Location)

– 127 Main Blocks, 64 KBytes each

Program/Erase Controller

Electronic Signature

– Manufacturer Code: 0020h

– Embedded Byte/Word Program algorithms

Program/Erase Suspend and Resume

Table 1.

Device Codes

– Read from any Block during Program

Root Part Number

Device Code

Suspend

– Read and Program another Block during

M29W640FT

M29W640FB

22EDh

22FDh

Erase Suspend

Unlock Bypass Program command

– Faster Production/Batch Programming

ECOPACK^®packages

V_PP/WP pin for Fast Program and Write Protect

Temporary Block Unprotection mode

Common Flash Interface

– 64-bit Security Code

Extended Memory Block

– Extra block used as security block or to

store additional information

Low power consumption

– Standby and Automatic Standby

100,000 Program/Erase cycles per block

Rev3

1/72

December 2005

www.st.com

12 3 4 5 6 7...72

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