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M29W640FT70ZA6E PDF预览

M29W640FT70ZA6E

更新时间: 2024-11-19 05:11:03
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存内存集成电路
页数 文件大小 规格书
71页 1409K
描述
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory

M29W640FT70ZA6E 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:BGA包装说明:TFBGA, BGA48,6X8,32
针数:48Reach Compliance Code:unknown
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.12最长访问时间:70 ns
其他特性:TOP BOOT BLOCK备用内存宽度:8
启动块:TOP命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PBGA-B48JESD-609代码:e1
长度:8 mm内存密度:67108864 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:8,127
端子数量:48字数:4194304 words
字数代码:4000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:4MX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA48,6X8,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
页面大小:4/8 words并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:8K,64K最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES类型:NOR TYPE
宽度:6 mmBase Number Matches:1

M29W640FT70ZA6E 数据手册

 浏览型号M29W640FT70ZA6E的Datasheet PDF文件第2页浏览型号M29W640FT70ZA6E的Datasheet PDF文件第3页浏览型号M29W640FT70ZA6E的Datasheet PDF文件第4页浏览型号M29W640FT70ZA6E的Datasheet PDF文件第5页浏览型号M29W640FT70ZA6E的Datasheet PDF文件第6页浏览型号M29W640FT70ZA6E的Datasheet PDF文件第7页 
M29W640FT  
M29W640FB  
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block)  
3V Supply Flash Memory  
Feature summary  
Supply voltage  
– V = 2.7V to 3.6V for Program, Erase,  
CC  
Read  
– V =12 V for Fast Program (optional)  
PP  
Asynchronous Random/Page Read  
– Page Width: 4 Words  
– Page Access: 25ns  
– Random Access: 60ns, 70ns  
TSOP48 (N)  
12 x 20mm  
Programming time  
– 10µs per Byte/Word typical  
– 4 Words / 8 Bytes Program  
135 Memory Blocks  
FBGA  
– 1 Boot Block and 7 Parameter Blocks,  
8 KBytes each (Top or Bottom location)  
– 127 Main Blocks, 64 KBytes each  
TFBGA48 (ZA)  
6x8mm  
Program/Erase Controller  
– Embedded Byte/Word Program algorithms  
Program/Erase Suspend and Resume  
– Read from any Block during Program  
Suspend  
– Read and Program another Block during  
Erase Suspend  
Extended Memory Block  
Extra block used as security block or to store  
additional information  
Low power consumption  
Unlock Bypass Program command  
– Standby and Automatic Standby  
– Faster Production/Batch Programming  
100,000 Program/Erase cycles per block  
V /WP pin for Fast Program and Write Protect  
PP  
Electronic Signature  
Temporary Block Unprotection mode  
– Manufacturer Code: 0020h  
Common Flash Interface  
®
ECOPACK packages  
– 64-bit Security Code  
Table 1.  
Device Codes  
Root Part Number  
Device Code  
M29W640FT  
M29W640FB  
22EDh  
22FDh  
December 2007  
Rev 7  
1/71  
www.numonyx.com  
1

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