5秒后页面跳转
M29W640FT60ZA6F PDF预览

M29W640FT60ZA6F

更新时间: 2024-11-19 05:11:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路
页数 文件大小 规格书
72页 476K
描述
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory

M29W640FT60ZA6F 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:BGA包装说明:6 X 8 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-48
针数:48Reach Compliance Code:unknown
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.47Is Samacsys:N
最长访问时间:60 ns备用内存宽度:8
启动块:TOP命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PBGA-B48JESD-609代码:e1
长度:8 mm内存密度:67108864 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:8,127
端子数量:48字数:4194304 words
字数代码:4000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:4MX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA48,6X8,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
页面大小:4/8 words并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:3/3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:8K,64K最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN SILVER COPPER端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:40切换位:YES
类型:NOR TYPE宽度:6 mm
Base Number Matches:1

M29W640FT60ZA6F 数据手册

 浏览型号M29W640FT60ZA6F的Datasheet PDF文件第2页浏览型号M29W640FT60ZA6F的Datasheet PDF文件第3页浏览型号M29W640FT60ZA6F的Datasheet PDF文件第4页浏览型号M29W640FT60ZA6F的Datasheet PDF文件第5页浏览型号M29W640FT60ZA6F的Datasheet PDF文件第6页浏览型号M29W640FT60ZA6F的Datasheet PDF文件第7页 
M29W640FT  
M29W640FB  
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block)  
3V Supply Flash Memory  
Figure 1. Packages  
Features summary  
Supply Voltage  
VCC = 2.7V to 3.6V for Program, Erase,  
Read  
VPP =12 V for Fast Program (optional)  
Asynchronous Random/Page Read  
Page Width: 4 Words  
TSOP48 (N)  
12 x 20mm  
Page Access: 25ns  
Random Access: 60ns, 70ns  
Programming Time  
FBGA  
10 µs per Byte/Word typical  
4 Words/8 Bytes Program  
135 memory blocks  
TFBGA48 (ZA)  
6x8mm  
1 Boot Block and 7 Parameter Blocks,  
8 KBytes each (Top or Bottom Location)  
127 Main Blocks, 64 KBytes each  
Program/Erase Controller  
Electronic Signature  
Manufacturer Code: 0020h  
Embedded Byte/Word Program algorithms  
Program/Erase Suspend and Resume  
Table 1.  
Device Codes  
Read from any Block during Program  
Root Part Number  
Device Code  
Suspend  
Read and Program another Block during  
M29W640FT  
M29W640FB  
22EDh  
22FDh  
Erase Suspend  
Unlock Bypass Program command  
Faster Production/Batch Programming  
ECOPACK® packages  
VPP/WP pin for Fast Program and Write Protect  
Temporary Block Unprotection mode  
Common Flash Interface  
64-bit Security Code  
Extended Memory Block  
Extra block used as security block or to  
store additional information  
Low power consumption  
Standby and Automatic Standby  
100,000 Program/Erase cycles per block  
Rev3  
1/72  
December 2005  
www.st.com  
1

与M29W640FT60ZA6F相关器件

型号 品牌 获取价格 描述 数据表
M29W640FT70N6E STMICROELECTRONICS

获取价格

64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory
M29W640FT70N6E NUMONYX

获取价格

64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory
M29W640FT70N6E MICRON

获取价格

64Mb (8Mb x8 or 4Mb x16), 3V, Page, Boot Block, Parallel NOR Flash Memory
M29W640FT70N6F STMICROELECTRONICS

获取价格

64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory
M29W640FT70N6F NUMONYX

获取价格

64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory
M29W640FT70N6F MICRON

获取价格

64Mb (8Mb x8 or 4Mb x16), 3V, Page, Boot Block, Parallel NOR Flash Memory
M29W640FT70ZA6E NUMONYX

获取价格

64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory
M29W640FT70ZA6E STMICROELECTRONICS

获取价格

64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory
M29W640FT70ZA6E MICRON

获取价格

64Mb (8Mb x8 or 4Mb x16), 3V, Page, Boot Block, Parallel NOR Flash Memory
M29W640FT70ZA6F STMICROELECTRONICS

获取价格

64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory