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M29W640FT70N6F PDF预览

M29W640FT70N6F

更新时间: 2024-03-03 10:08:59
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
60页 760K
描述
64Mb (8Mb x8 or 4Mb x16), 3V, Page, Boot Block, Parallel NOR Flash Memory

M29W640FT70N6F 数据手册

 浏览型号M29W640FT70N6F的Datasheet PDF文件第2页浏览型号M29W640FT70N6F的Datasheet PDF文件第3页浏览型号M29W640FT70N6F的Datasheet PDF文件第4页浏览型号M29W640FT70N6F的Datasheet PDF文件第5页浏览型号M29W640FT70N6F的Datasheet PDF文件第6页浏览型号M29W640FT70N6F的Datasheet PDF文件第7页 
64Mb: 3V Embedded Parallel NOR Flash  
Features  
Parallel NOR Flash Embedded Memory  
M29W640FT, M29W640FB  
• UNLOCK BYPASS PROGRAM command  
– Faster production/batch programming  
• VPP/WP# pin for fast program and write protect  
Temporary block unprotection mode  
• Common Flash interface  
– 64-bit security code  
• Extended memory block  
– Extra block used as security block or to store ad-  
ditional information  
• Low power consumption  
Features  
• Supply voltage  
– VCC = 2.7–3.6V (program, erase, read)  
– VPP = 12V for fast program (optional)  
• Asynchronous random/page read  
– Page width: 4 words  
– Page access: 25ns  
– Random access: 60ns, 70ns  
• Program time  
– 10µs per byte/word TYP  
– 4 words/8 bytes program  
• Memory organization  
– 135 memory blocks  
– 1 boot block and 7 parameter blocks, 8KB each  
(top or bottom)  
– 127 main blocks, 64KB each  
• Program/erase controller  
– Embedded byte/word program algorithms  
• Program/erase suspend and resume  
– Read from any block during a PROGRAM SUS-  
PEND operation  
– Standby and automatic standby  
• 100,000 PROGRAM/ERASE cycles per block  
• Electronic signature  
– Manufacturer code: 0020h  
– Device code M29W640FT: 22EDh  
– Device code M29W640FB: 22FDh  
• RoHS-compliant packages  
– 48-pin TSOP (N) 12mm x 20mm  
– 48-ball TFBGA (ZA) 6mm x 8mm  
– Read or program another block during an ERASE  
SUSPEND operation  
Part Numbering Information  
Available with extended memory block prelocked by Micron. Devices are shipped from the factory with memory  
content bits erased to 1. For available options, such as packages or speed, or for further information, contact your  
Micron sales representative. Part numbers can be verified at www.micron.com. Feature and specification compari-  
son by device type is available at www.micron.com/products. Contact the factory for devices not found.  
Table 1: Part Number Information  
Part Number  
Category  
Category Details  
M29 = Parallel Flash memory  
W = VCC = 2.7 to 3.6V  
640F = 64Mb (x8/x16) boot block  
T = Top boot  
Device Type  
Operating Voltage  
Device Function  
Array Matrix  
B = Bottom boot  
Speed  
60 = 60ns  
70 = 70ns  
PDF: 09005aef8551a2ac  
m29w_640f.pdf - Rev. C 2/18 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
© 2013 Micron Technology, Inc. All rights reserved.  
1
Products and specifications discussed herein are subject to change by Micron without notice.  

M29W640FT70N6F 替代型号

型号 品牌 替代类型 描述 数据表
M29W640GT70NA6E MICRON

完全替代

64Mb (8Mb x8 or 4Mb x16), Uniform Block or Boot Block, Parallel NOR Flash Memory
M29W640GT70NA6F MICRON

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64Mb (8Mb x8 or 4Mb x16), Uniform Block or Boot Block, Parallel NOR Flash Memory

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