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M29F040B55N6F PDF预览

M29F040B55N6F

更新时间: 2024-11-24 07:54:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器光电二极管
页数 文件大小 规格书
20页 461K
描述
512KX8 FLASH 5V PROM, 55ns, PDSO32, 8 X 20 MM, LEAD FREE, PLASTIC, TSOP-32

M29F040B55N6F 数据手册

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M29F040B  
4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory  
SINGLE 5V ± 10% SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 45ns  
PROGRAMMING TIME  
– 8 µs per Byte typical  
8 UNIFORM 64 Kbytes MEMORY BLOCKS  
PLCC32 (K)  
TSOP32 (N)  
8 x 20mm  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte Program algorithm  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
LOW POWER CONSUMPTION  
– Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 2h  
– Device Code: Eh  
ECOPACK® ACKAGES AVAILABLE  
September 2005  
1/20  

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