Datasheet > M29F040B-55P6R

M29F040B-55P6R

更新时间： 2024-11-25 22:57:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存
页数	文件大小	规格书
21页	134K
描述
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory

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M29F040B-55P6R 数据手册

M29F040B

4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory

PRELIMINARY DATA

■ SINGLE 5V ± 10% SUPPLY VOLTAGE for

PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 45ns

■ PROGRAMMING TIME

– 8µs per Byte typical

■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS

PLCC32 (K)

TSOP32 (N)

8 x 20mm

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte Program algorithm

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ LOW POWER CONSUMPTION

PDIP32 (P)

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per

Figure 1. Logic Diagram

BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: E2h

A0-A18

DQ0-DQ7

M29F040B

AI02900

September 1999

1/21

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

12 3 4 5 6 7...21

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