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M29F040B-70N3TR PDF预览

M29F040B-70N3TR

更新时间: 2024-11-25 22:57:39
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意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
21页 134K
描述
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory

M29F040B-70N3TR 数据手册

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M29F040B  
4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory  
PRELIMINARY DATA  
SINGLE 5V ± 10% SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 45ns  
PROGRAMMING TIME  
– 8µs per Byte typical  
8 UNIFORM 64 Kbytes MEMORY BLOCKS  
PLCC32 (K)  
TSOP32 (N)  
8 x 20mm  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte Program algorithm  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
32  
1
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
LOW POWER CONSUMPTION  
PDIP32 (P)  
– Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
Figure 1. Logic Diagram  
BLOCK  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code: E2h  
V
CC  
19  
8
A0-A18  
DQ0-DQ7  
W
E
M29F040B  
G
V
SS  
AI02900  
September 1999  
1/21  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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