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M29F040B70N6E PDF预览

M29F040B70N6E

更新时间: 2024-11-08 13:10:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
21页 180K
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M29F040B70N6E 数据手册

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M29F040B  
4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory  
SINGLE 5V ± 10% SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 45ns  
PROGRAMMING TIME  
– 8 µs per Byte typical  
8 UNIFORM 64 Kbytes MEMORY BLOCKS  
PLCC32 (K)  
TSOP32 (N)  
8 x 20mm  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte Program algorithm  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
32  
1
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
LOW POWER CONSUMPTION  
PDIP32 (P)  
– Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
Figure 1. Logic Diagram  
BLOCK  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code: E2h  
V
CC  
19  
8
A0-A18  
DQ0-DQ7  
W
E
M29F040B  
G
V
SS  
AI02900  
April 2002  
1/21  

M29F040B70N6E 替代型号

型号 品牌 替代类型 描述 数据表
M29F040B70N1 STMICROELECTRONICS

类似代替

512KX8 FLASH 5V PROM, 70ns, PDSO32, 8 X 20 MM, PLASTIC, TSOP-32
M29F040B70N6 STMICROELECTRONICS

功能相似

512KX8 FLASH 5V PROM, 70ns, PDSO32, 8 X 20 MM, PLASTIC, TSOP-32
A29040BV-70UF AMICC

功能相似

512K X 8 Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory

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