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M29F040B70K3E PDF预览

M29F040B70K3E

更新时间: 2024-11-23 13:09:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路
页数 文件大小 规格书
21页 180K
描述
512KX8 FLASH 5V PROM, 70ns, PQCC32, LEAD FREE, PLASTIC, LCC-32

M29F040B70K3E 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:QFJ包装说明:LEAD FREE, PLASTIC, LCC-32
针数:32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.17Is Samacsys:N
最长访问时间:70 ns命令用户界面:YES
数据轮询:YES耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PQCC-J32长度:13.97 mm
内存密度:4194304 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
部门数/规模:8端子数量:32
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:512KX8
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装等效代码:LDCC32,.5X.6封装形状:RECTANGULAR
封装形式:CHIP CARRIER并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
编程电压:5 V认证状态:Not Qualified
座面最大高度:3.56 mm部门规模:64K
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.02 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:11.43 mm
Base Number Matches:1

M29F040B70K3E 数据手册

 浏览型号M29F040B70K3E的Datasheet PDF文件第2页浏览型号M29F040B70K3E的Datasheet PDF文件第3页浏览型号M29F040B70K3E的Datasheet PDF文件第4页浏览型号M29F040B70K3E的Datasheet PDF文件第5页浏览型号M29F040B70K3E的Datasheet PDF文件第6页浏览型号M29F040B70K3E的Datasheet PDF文件第7页 
M29F040B  
4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory  
SINGLE 5V ± 10% SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 45ns  
PROGRAMMING TIME  
– 8 µs per Byte typical  
8 UNIFORM 64 Kbytes MEMORY BLOCKS  
PLCC32 (K)  
TSOP32 (N)  
8 x 20mm  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte Program algorithm  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
32  
1
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
LOW POWER CONSUMPTION  
PDIP32 (P)  
– Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
Figure 1. Logic Diagram  
BLOCK  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code: E2h  
V
CC  
19  
8
A0-A18  
DQ0-DQ7  
W
E
M29F040B  
G
V
SS  
AI02900  
April 2002  
1/21  

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