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M29F040B55P1T PDF预览

M29F040B55P1T

更新时间: 2024-11-04 05:01:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
21页 180K
描述
4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory

M29F040B55P1T 技术参数

生命周期:Transferred零件包装代码:DIP
包装说明:0.600 INCH, PLASTIC, DIP-32针数:32
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.46
Is Samacsys:N最长访问时间:55 ns
JESD-30 代码:R-PDIP-T32长度:41.91 mm
内存密度:4194304 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:32字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:512KX8封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
编程电压:5 V认证状态:Not Qualified
座面最大高度:5.08 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
类型:NOR TYPE宽度:15.24 mm
Base Number Matches:1

M29F040B55P1T 数据手册

 浏览型号M29F040B55P1T的Datasheet PDF文件第2页浏览型号M29F040B55P1T的Datasheet PDF文件第3页浏览型号M29F040B55P1T的Datasheet PDF文件第4页浏览型号M29F040B55P1T的Datasheet PDF文件第5页浏览型号M29F040B55P1T的Datasheet PDF文件第6页浏览型号M29F040B55P1T的Datasheet PDF文件第7页 
M29F040B  
4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory  
SINGLE 5V ± 10% SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 45ns  
PROGRAMMING TIME  
– 8 µs per Byte typical  
8 UNIFORM 64 Kbytes MEMORY BLOCKS  
PLCC32 (K)  
TSOP32 (N)  
8 x 20mm  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte Program algorithm  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
32  
1
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
LOW POWER CONSUMPTION  
PDIP32 (P)  
– Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
Figure 1. Logic Diagram  
BLOCK  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code: E2h  
V
CC  
19  
8
A0-A18  
DQ0-DQ7  
W
E
M29F040B  
G
V
SS  
AI02900  
April 2002  
1/21  

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