Datasheet > M29F016B55N6T

M29F016B55N6T

更新时间： 2024-11-05 22:57:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存
页数	文件大小	规格书
22页	137K
描述
16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory

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M29F016B55N6T 数据手册

M29F016B

16 Mbit (2Mb x8, Uniform Block) Single Supply Flash Memory

■ SINGLE 5V±10% SUPPLY VOLTAGE for

PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 55ns

■ PROGRAMMING TIME

– 8µs by Byte typical

■ 32 UNIFORM 64 Kbyte MEMORY BLOCKS

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte Program algorithm

TSOP40 (N)

10 x 20mm

SO44 (M)

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

– Ready/Busy Output Pin

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

Figure 1. Logic Diagram

■ TEMPORARY BLOCK UNPROTECTION

MODE

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

A0-A20

DQ0-DQ7

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: ADh

M29F016B

AI02964

March 2000

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12 3 4 5 6 7...22

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