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M29F016B90M1T PDF预览

M29F016B90M1T

更新时间: 2024-11-08 22:20:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
22页 137K
描述
16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory

M29F016B90M1T 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOIC包装说明:0.525 INCH, PLASTIC, SO-44
针数:44Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.48最长访问时间:90 ns
命令用户界面:YES数据轮询:YES
JESD-30 代码:R-PDSO-G44JESD-609代码:e3
长度:28.2 mm内存密度:16777216 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:32
端子数量:44字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:2MX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP44,.63
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL电源:5 V
编程电压:5 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:2.62 mm
部门规模:64K最大待机电流:0.00015 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
切换位:YES类型:NOR TYPE
宽度:13.3 mmBase Number Matches:1

M29F016B90M1T 数据手册

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M29F016B  
16 Mbit (2Mb x8, Uniform Block) Single Supply Flash Memory  
SINGLE 5V±10% SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 55ns  
PROGRAMMING TIME  
– 8µs by Byte typical  
44  
32 UNIFORM 64 Kbyte MEMORY BLOCKS  
PROGRAM/ERASE CONTROLLER  
1
– Embedded Byte Program algorithm  
TSOP40 (N)  
10 x 20mm  
SO44 (M)  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
– Ready/Busy Output Pin  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
Figure 1. Logic Diagram  
TEMPORARY BLOCK UNPROTECTION  
MODE  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
LOW POWER CONSUMPTION  
V
CC  
21  
8
– Standby and Automatic Standby  
A0-A20  
DQ0-DQ7  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
W
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code: ADh  
M29F016B  
E
G
RB  
RP  
V
SS  
AI02964  
March 2000  
1/22  

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