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M29F016B70N1T PDF预览

M29F016B70N1T

更新时间: 2024-09-15 22:20:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储
页数 文件大小 规格书
22页 137K
描述
16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory

M29F016B70N1T 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:TSOP包装说明:10 X 20 MM, PLASTIC, TSOP-40
针数:40Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.43Is Samacsys:N
最长访问时间:70 ns命令用户界面:YES
数据轮询:YESJESD-30 代码:R-PDSO-G40
JESD-609代码:e0长度:18.4 mm
内存密度:16777216 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
部门数/规模:32端子数量:40
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:2MX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP40,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
电源:5 V编程电压:5 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:64K
最大待机电流:0.00015 A子类别:Flash Memories
最大压摆率:0.02 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL切换位:YES
类型:NOR TYPE宽度:10 mm
Base Number Matches:1

M29F016B70N1T 数据手册

 浏览型号M29F016B70N1T的Datasheet PDF文件第2页浏览型号M29F016B70N1T的Datasheet PDF文件第3页浏览型号M29F016B70N1T的Datasheet PDF文件第4页浏览型号M29F016B70N1T的Datasheet PDF文件第5页浏览型号M29F016B70N1T的Datasheet PDF文件第6页浏览型号M29F016B70N1T的Datasheet PDF文件第7页 
M29F016B  
16 Mbit (2Mb x8, Uniform Block) Single Supply Flash Memory  
SINGLE 5V±10% SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 55ns  
PROGRAMMING TIME  
– 8µs by Byte typical  
44  
32 UNIFORM 64 Kbyte MEMORY BLOCKS  
PROGRAM/ERASE CONTROLLER  
1
– Embedded Byte Program algorithm  
TSOP40 (N)  
10 x 20mm  
SO44 (M)  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
– Ready/Busy Output Pin  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
Figure 1. Logic Diagram  
TEMPORARY BLOCK UNPROTECTION  
MODE  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
LOW POWER CONSUMPTION  
V
CC  
21  
8
– Standby and Automatic Standby  
A0-A20  
DQ0-DQ7  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
W
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code: ADh  
M29F016B  
E
G
RB  
RP  
V
SS  
AI02964  
March 2000  
1/22  

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