Datasheet > M28W640C-ZBT

M28W640C-ZBT

更新时间： 2024-09-17 22:14:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
54页	393K
描述
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

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数据手册

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M28W640C-ZBT 数据手册

M28W640CT

M28W640CB

64 Mbit (4Mb x16, Boot Block)

3V Supply Flash Memory

PRELIMINARY DATA

FEATURES SUMMARY

■ SUPPLY VOLTAGE

Figure 1. Packages

– V = 2.7V to 3.6V Core Power Supply

– V

= 1.65V to 3.3V for Input/Output

DDQ

FBGA

– V = 12V for fast Program (optional)

■ ACCESS TIME

– 3.0V to 3.6V: 80ns

TFBGA48 (ZB)

8 x 6 ball array

– 2.7V to 3.6V: 90ns

■ PROGRAMMING TIME:

– 10µs typical

– Double Word Programming Option

– Quadruple Word Programming Option

■ COMMON FLASH INTERFACE

■ MEMORY BLOCKS

– Parameter Blocks (Top or Bottom location)

– Main Blocks

TSOP48 (N)

12 x 20mm

■ BLOCK LOCKING

– All blocks locked at Power Up

– Any combination of blocks can be locked

– WP for Block Lock-Down

■ SECURITY

– 128 bit user Programmable OTP cells

– 64 bit unique device identifier

– One Parameter Block Permanently Lockable

■ AUTOMATIC STAND-BY MODE

■ PROGRAM and ERASE SUSPEND

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M28W640CT: 8848h

– Bottom Device Code, M28W640CB: 8849h

November 2001

1/54

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

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