Datasheet > M28S-A

M28S-A

更新时间： 2024-12-01 09:52:43

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
2页	70K
描述
Transistor

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中文翻译

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数据手册

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M28S-A 数据手册

M28S

M C C

M28S-B

M28S-C

M28S-D

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

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Micro Commercial Components

Features

NPN Silicon

Plastic-Encapsulate

Transistor

•

Capable of 0.625Watts of Power Dissipation.

Collector-current 1.0A

Collector-base Voltage 40V

Operating and storage junction temperature range: -55^OC to +150^OC

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Marking: M28S X

TO-92

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CBO

Collector-Emitter Breakdown Voltage

(I _C=1.0mAdc, I_B=0)

Collector-Base Breakdown Voltage

(I _C=0.1mAdc, I_E=0)

Emitter-Base Breakdown Voltage

(I _E=0.1mAdc, I_C=0)

Collector Cutoff Current

(V _CB=40Vdc, I_E=0)

---

Vdc

6.0

---

Adc

1.0

5.0

0.1

uAdc

Vdc

I_CEO

Collector Cutoff Current

----

---

(V_CE=20Vdc, I =0)

I_EBO

Emitter Cutoff Current

uAdc

(V_EB=5.0Vdc, I =0)

ON CHARACTERISTICS

h_FE-1

h_FE-2

h _FE-3

h _FE-4

V _CE(sat)

f_T

DC Current Gain

(I _C=1.0mAdc, V_CE=1.0Vdc)

DC Current Gain

(I _C=100mAdc, V_CE=1.0Vdc)

DC Current Gain

(I _C=300mAdc, V_CE=1.0Vdc)

DC Current Gain

(I _C=500mAdc, V_CE=1.0Vdc)

Collector-Emitter Saturation Voltage

(I _C=600mAdc, I =20mAdc)

Transition Frequency

(V_CE=10Vdc, I_C=50mAdc, f=30MHz)

290

300

---

1000

0.55

---

DIMENSIONS

Vdc

MHz

INCHES

MIN

.170

.550

.010

.130

.010

MIN

DIM

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

100

.190

.590

.020

.160

.104

4.33

4.30

13.97

0.36

3.30

2.44

CLASSIFICATION OF HFE

Rank

Range

300-550

500-700

650-1000

www.mccsemi.com

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Revision: 5

2007/03/02

中文翻译

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