Datasheet > M28SB(SOT-23)

M28SB(SOT-23)

更新时间： 2024-11-18 21:16:31

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	242K
描述
Transistor

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技术参数
数据手册

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M28SB(SOT-23) 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
最大集电极电流 (IC)：	1 A	配置：	Single
最小直流电流增益 (hFE)：	300	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.02 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	100 MHz	Base Number Matches：	1

M28SB(SOT-23) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

M28S TRANSISTOR (NPN)

SOT–23

FEATURES

 Excellent h_FELinearity

 High DC Current Gain

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

1. BASE

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

2. EMITTER

3. COLLECTOR

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

200

℃/W

℃

P_C

R_ΘJA

T_j

625

150

Storage Temperature

T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

V_(BR)CBOI_C=0.1mA, I_E=0

V_(BR)CEOI_C=1mA, I_B=0

V_(BR)EBOI_E=0.1mA, I_C=0

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_CBO

I_CEO

V_CB=35V, I_E=0

0.1

µA

V_CE=20V, I_B=0

Collector cut-off current

I_EBO

V_EB=5V, I_C=0

0.1

Emitter cut-off current

h_FE(1)

h_FE(2)

h_FE(3)

h_FE(4)

V_CE(sat)

f_T

V_CE=1V, I_C=1mA

290

300

V_CE=1V, I_C=100mA

V_CE=1V, I_C=300mA

V_CE=1V, I_C=500mA

I_C=600mA, I_B=20mA

V_CE=10V,I_E=50mA, f=1MHz

V_CB=10V, I_E=0, f=1MHz

1000

0.55

DC current gain

Collector-emitter saturation voltage

Transition frequency

100

MHz

C_ob

Collector output capacitance

CLASSIFICATION OF h_FE(2)

RANK

RANGE

300–550

500–700

28S

650–1000

MARKING

A,Oct,2010

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